Frequency and voltage dependence of electrical conductivity, complex electric modulus, and dielectric properties of Al/Alq3/p-Si structure
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Tarih
2020
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Tubitak Scientific & Technological Research Council Turkey
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In order to enhance the capacitance of the Al/p-Si metal-semiconductor structure, the Alq(3) thin film was coated between these two layers using the spin coating technique as the interlayer. The electrical conductivity, real and imaginary parts of electric modulus, dielectric loss and dielectric constant parameters were examined at the room temperature by the help of admittance measurements in the 100 kHz to 1 MHz frequency range. The effect of frequency on the dielectric constant and dielectric loss values is negligible at the negative voltage values, up to about 0.8 V, and these values rapidly ascended after 0.8 V. The function of electrical modulus complex has been examined from the point of permittivity and impedance in order to clutch the contribution of the particle border on the relaxation mechanism of the materials. It is established that the examined dielectric parameters strongly correlated with the voltage and frequency. As a result, the changes in the dielectric parameters and electrical modulus due to the varying frequency were described as the results of relaxation process, polarization and surface conditions. Furthermore, it could be stated that the Alq(3) material used in the interfacial layer is a useful material which could be used in addition to the conventional materials.
Açıklama
Anahtar Kelimeler
Dielectric properties, spin coating, Al/Alq(3)/p-Si, frequency and voltage dependency
Kaynak
Turkish Journal of Physics
WoS Q Değeri
N/A
Scopus Q Değeri
Q2
Cilt
44
Sayı
1
