The electrical and dielectric properties of the Au/Ti/Hf02/n-GaAs structures

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dc.contributor.authorKarabulut, Abdulkerim
dc.contributor.authorTurut, Abdulmecit
dc.contributor.authorKaratas, Sukru
dc.date.accessioned2025-03-23T19:39:36Z
dc.date.available2025-03-23T19:39:36Z
dc.date.issued2018
dc.departmentSinop Üniversitesi
dc.description.abstractIn this work, temperature dependent electrical and dielectric properties of the Au/Ti/HfO2/n-GaAs structures were investigated using capacitance-voltage (C-V) and conductance voltage (G-V) measurements in the temperature range of 60-320 K by steps of 20 K at 1 MHz. The dielectric constant (epsilon'), dielectric loss (89, dielectric loss tangent (tans) and ac electrical conductivities (sigma(ac)) have been calculated as a function of temperature. These values of the epsilon', epsilon '', tans delta and sigma(ac) have been found to be 2.272, 5.981, 2.631 and 3.32 x 10(-6) (Omega(-1)cm(-1)) at 80 K, respectively, 1.779, 2.315, 1.301 and 1.28 x 10(-6) (Omega(-1)cm(-1)), respectively at 320 K. These decrease of the dielectric parameters (epsilon', epsilon '', tans delta and sigma(ac)) have been observed at high temperatures. The experimental results show that electrical and dielectric properties are strongly temperature and bias voltage dependent. (C) 2017 Elsevier B.V. All rights reserved.
dc.identifier.doi10.1016/j.molstruc.2017.12.087
dc.identifier.endpage518
dc.identifier.issn0022-2860
dc.identifier.issn1872-8014
dc.identifier.scopus2-s2.0-85039988560
dc.identifier.scopusqualityQ1
dc.identifier.startpage513
dc.identifier.urihttps://doi.org/10.1016/j.molstruc.2017.12.087
dc.identifier.urihttps://hdl.handle.net/11486/6387
dc.identifier.volume1157
dc.identifier.wosWOS:000425197400060
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofJournal of Molecular Structure
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20250323
dc.subjectGaAs semiconductor
dc.subjectTemperature
dc.subjectDielectric properties
dc.subjectConductivity
dc.titleThe electrical and dielectric properties of the Au/Ti/Hf02/n-GaAs structures
dc.typeArticle

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