The electrical and dielectric properties of the Au/Ti/Hf02/n-GaAs structures
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Tarih
2018
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In this work, temperature dependent electrical and dielectric properties of the Au/Ti/HfO2/n-GaAs structures were investigated using capacitance-voltage (C-V) and conductance voltage (G-V) measurements in the temperature range of 60-320 K by steps of 20 K at 1 MHz. The dielectric constant (epsilon'), dielectric loss (89, dielectric loss tangent (tans) and ac electrical conductivities (sigma(ac)) have been calculated as a function of temperature. These values of the epsilon', epsilon '', tans delta and sigma(ac) have been found to be 2.272, 5.981, 2.631 and 3.32 x 10(-6) (Omega(-1)cm(-1)) at 80 K, respectively, 1.779, 2.315, 1.301 and 1.28 x 10(-6) (Omega(-1)cm(-1)), respectively at 320 K. These decrease of the dielectric parameters (epsilon', epsilon '', tans delta and sigma(ac)) have been observed at high temperatures. The experimental results show that electrical and dielectric properties are strongly temperature and bias voltage dependent. (C) 2017 Elsevier B.V. All rights reserved.
Açıklama
Anahtar Kelimeler
GaAs semiconductor, Temperature, Dielectric properties, Conductivity
Kaynak
Journal of Molecular Structure
WoS Q Değeri
Q2
Scopus Q Değeri
Q1
Cilt
1157
