Capacitance-conductance characteristics of Au/Ti/Al2O3/n-GaAs structures with very thin Al2O3 interfacial layer

Basit Öğe Kaydı
dc.authoridBIYIKLI, Necmi/0000-0001-9387-5145
dc.contributor.authorTurut, A.
dc.contributor.authorKarabulut, A.
dc.contributor.authorEjderha, K.
dc.contributor.authorBiyikli, N.
dc.date.accessioned2025-03-23T19:34:21Z
dc.date.available2025-03-23T19:34:21Z
dc.date.issued2015
dc.departmentSinop Üniversitesi
dc.description.abstractHigh-k Al2O3 with metallic oxide thickness of about 3 nm on n-type GaAs substrate has been deposited by the atomic layer deposition (ALD) technique. Thus, it has been formed the Au-Ti/Al2O3/n-GaAs MIS structures. It has been seen that the MIS structure exhibits excellent capacitance-voltage (C-V) and current-voltage (I-V) properties at 300 K. The saturation current of the forward bias and reverse bias I-V characteristics was the same value. An ideality factor value of 1.10 has been obtained from the forward bias I-V characteristics. The C-Vcharacteristics of the structure have shown almost no hysteresis from +3 V to -10 V with frequency as a parameter. The reverse bias C-V curves have exhibited a behavior without frequency dispersion and almost hysteresis at each frequency from 10 kHz to 1000 kHz.
dc.description.sponsorshipState Planning Organization of Turkey through the National Nanotechnology Research Center Project
dc.description.sponsorshipThis work was performed in part at the UNAM-Institute of Materials Science and Nanotechnology which is supported by the State Planning Organization of Turkey through the National Nanotechnology Research Center Project. The measurements were made at Department of Physics, Faculty of Sciences and Arts, Bingol University, Turkey.
dc.identifier.doi10.1088/2053-1591/2/4/046301
dc.identifier.issn2053-1591
dc.identifier.issue4
dc.identifier.scopus2-s2.0-84953328532
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1088/2053-1591/2/4/046301
dc.identifier.urihttps://hdl.handle.net/11486/5658
dc.identifier.volume2
dc.identifier.wosWOS:000370007300044
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherIop Publishing Ltd
dc.relation.ispartofMaterials Research Express
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_WOS_20250323
dc.subjecthigh dielectric material
dc.subjectatomic layer dedeposition
dc.subjectMIS devices
dc.titleCapacitance-conductance characteristics of Au/Ti/Al2O3/n-GaAs structures with very thin Al2O3 interfacial layer
dc.typeArticle

Dosyalar

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu