Capacitance-conductance characteristics of Au/Ti/Al2O3/n-GaAs structures with very thin Al2O3 interfacial layer
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Tarih
2015
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Iop Publishing Ltd
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
High-k Al2O3 with metallic oxide thickness of about 3 nm on n-type GaAs substrate has been deposited by the atomic layer deposition (ALD) technique. Thus, it has been formed the Au-Ti/Al2O3/n-GaAs MIS structures. It has been seen that the MIS structure exhibits excellent capacitance-voltage (C-V) and current-voltage (I-V) properties at 300 K. The saturation current of the forward bias and reverse bias I-V characteristics was the same value. An ideality factor value of 1.10 has been obtained from the forward bias I-V characteristics. The C-Vcharacteristics of the structure have shown almost no hysteresis from +3 V to -10 V with frequency as a parameter. The reverse bias C-V curves have exhibited a behavior without frequency dispersion and almost hysteresis at each frequency from 10 kHz to 1000 kHz.
Açıklama
Anahtar Kelimeler
high dielectric material, atomic layer dedeposition, MIS devices
Kaynak
Materials Research Express
WoS Q Değeri
Q3
Scopus Q Değeri
Q2
Cilt
2
Sayı
4
