Fabrication of p-Si/n-NiO:Zn photodiodes and current/capacitance-voltage characterizations

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dc.contributor.authorPehlivanoglu, Seval Aksoy
dc.date.accessioned2025-03-23T19:38:59Z
dc.date.available2025-03-23T19:38:59Z
dc.date.issued2021
dc.departmentSinop Üniversitesi
dc.description.abstractThe present study includes the results of a series of studies on the appropriateness of their use as photodiodes after investigating some of the physical properties of Zn doped NiO films by the sol-gel spin coating technique. The morphological properties of the films were examined and it was determined that the Zn additive provides the formation of smoother films. The T% and E-g value of the films decreased with the Zn dopant. I - V measurements have shown that all films are light sensitive. The ideality factors of the photodiodes were calculated and the lowest ideality factor was reported as 4.31 for the p - Si/n - MO : 0.5%Zn/Al photodiode. The photosensitivity of photodiodes was investigated and it was determined that they exhibit linear photoconductivity behavior. The highest RR value was observed at p - Si/n - NiO : 0.5%Zn/Al photodiode among all photodiodes. The barrier height of photodiodes was determined using I - V method, Norde Method and C - V method and results were compared.
dc.description.sponsorshipEskisehir Technical University Commission of Scientific Research Project [1706F385]
dc.description.sponsorshipThis work was supported by Eskisehir Technical University Commission of Scientific Research Project under Grant No.1706F385. The experimental and characterization of this study were carried out in Semiconductors Characterization Laboratory of Eskisehir Technical University. I would like to thank Prof. Dr. Yasemin Caglar and Prof. Dr. Mujdat Caglar for providing me to use their laboratory facilities.
dc.identifier.doi10.1016/j.physb.2020.412482
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.scopus2-s2.0-85098128206
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1016/j.physb.2020.412482
dc.identifier.urihttps://hdl.handle.net/11486/6261
dc.identifier.volume603
dc.identifier.wosWOS:000614520900002
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorPehlivanoglu, Seval Aksoy
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofPhysica B-Condensed Matter
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20250323
dc.subjectNickel oxide
dc.subjectZinc
dc.subjectSol-gel
dc.subjectPhotodiode
dc.subjectCurrent/capacitance voltage measurements
dc.titleFabrication of p-Si/n-NiO:Zn photodiodes and current/capacitance-voltage characterizations
dc.typeArticle

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