Fabrication of p-Si/n-NiO:Zn photodiodes and current/capacitance-voltage characterizations

The present study includes the results of a series of studies on the appropriateness of their use as photodiodes after investigating some of the physical properties of Zn doped NiO films by the sol-gel spin coating technique. The morphological properties of the films were examined and it was determined that the Zn additive provides the formation of smoother films. The T% and E-g value of the films decreased with the Zn dopant. I - V measurements have shown that all films are light sensitive. The ideality factors of the photodiodes were calculated and the lowest ideality factor was reported as 4.31 for the p - Si/n - MO : 0.5%Zn/Al photodiode. The photosensitivity of photodiodes was investigated and it was determined that they exhibit linear photoconductivity behavior. The highest RR value was observed at p - Si/n - NiO : 0.5%Zn/Al photodiode among all photodiodes. The barrier height of photodiodes was determined using I - V method, Norde Method and C - V method and results were compared.