Fabrication of p-Si/n-NiO:Zn photodiodes and current/capacitance-voltage characterizations
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Tarih
2021
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The present study includes the results of a series of studies on the appropriateness of their use as photodiodes after investigating some of the physical properties of Zn doped NiO films by the sol-gel spin coating technique. The morphological properties of the films were examined and it was determined that the Zn additive provides the formation of smoother films. The T% and E-g value of the films decreased with the Zn dopant. I - V measurements have shown that all films are light sensitive. The ideality factors of the photodiodes were calculated and the lowest ideality factor was reported as 4.31 for the p - Si/n - MO : 0.5%Zn/Al photodiode. The photosensitivity of photodiodes was investigated and it was determined that they exhibit linear photoconductivity behavior. The highest RR value was observed at p - Si/n - NiO : 0.5%Zn/Al photodiode among all photodiodes. The barrier height of photodiodes was determined using I - V method, Norde Method and C - V method and results were compared.
Açıklama
Anahtar Kelimeler
Nickel oxide, Zinc, Sol-gel, Photodiode, Current/capacitance voltage measurements
Kaynak
Physica B-Condensed Matter
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
603
