A novel device fabricated with Cu2NiSnS4 chalcogenide: Morphological and temperature-dependent electrical characterizations

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dc.authoridOZEL, faruk/0000-0002-3689-0469
dc.authoridSAHINKAYA, MEHMET AKIF/0000-0001-6461-8959
dc.contributor.authorKarabulut, Abdulkerim
dc.contributor.authorSarilmaz, Adem
dc.contributor.authorOzel, Faruk
dc.contributor.authorOrak, Ikram
dc.contributor.authorSahinkaya, Mehmet Akif
dc.date.accessioned2025-03-23T19:41:54Z
dc.date.available2025-03-23T19:41:54Z
dc.date.issued2020
dc.departmentSinop Üniversitesi
dc.description.abstractCu2NiSnS4 nanorods were synthesized by the usage of hot-injection technique and used as interlayer between the p-Si and Al metal in order to examine their behavior against the temperature and frequency changes. The current-voltage measurements were performed in 80-300 K temperature range with 20 K steps. The X-Ray Diffraction (XRD) was used to prove the crystal structure of the synthesized Cu2NiSnS4 nanorods. Some crucial device parameters such as barrier height, series resistance and ideality factor values were calculated, and the obtained values were compared with other studies in the literature. It has been seen that the calculated parameters of the prepared device are strongly dependent on temperature changes. Besides, the capacitor behavior of fabricated device was investigated depending on the frequency and voltage changes. The experimental results indicated that the prepared device with Cu2NiSnS4 nanorods interlayer could be utilized in the electronic technology, especially applications in wide temperature range.
dc.description.sponsorshipKaramanoglu Mehmetbey University BILTEM (Scientific and Technological Research and Application Center); TUBITAK (The Scientific and Technological Research Council of Turkey) [217M212]; Scientific Research Projects Unit of Sinop University [MMF-1901-18-33]
dc.description.sponsorshipThis work is supported by Karamanoglu Mehmetbey University BILTEM (Scientific and Technological Research and Application Center) and TUBITAK (The Scientific and Technological Research Council of Turkey) under project number 217M212, and the Scientific Research Projects Unit of Sinop University, Project No. MMF-1901-18-33. The authors would like to thank Sinop University.
dc.identifier.doi10.1016/j.cap.2019.10.011
dc.identifier.endpage64
dc.identifier.issn1567-1739
dc.identifier.issn1878-1675
dc.identifier.issue1
dc.identifier.scopus2-s2.0-85073110449
dc.identifier.scopusqualityQ2
dc.identifier.startpage58
dc.identifier.urihttps://doi.org/10.1016/j.cap.2019.10.011
dc.identifier.urihttps://hdl.handle.net/11486/6676
dc.identifier.volume20
dc.identifier.wosWOS:000496996300010
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofCurrent Applied Physics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20250323
dc.subjectElectrical characterization
dc.subjectCu2NiSnS4 nanorods
dc.subjectHot-injection technique
dc.subjectInterfacial layer
dc.subjectDiode application
dc.subjectChalcogenides
dc.titleA novel device fabricated with Cu2NiSnS4 chalcogenide: Morphological and temperature-dependent electrical characterizations
dc.typeArticle

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