Chemical precursor-dependent dual effect of doping on the gas-sensing performance of metal oxide semiconducting materials

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dc.authoridBULUT, Fatih/0000-0001-5335-2307
dc.contributor.authorAjjaq, Ahmad
dc.contributor.authorBulut, Fatih
dc.contributor.authorOzturk, Ozgur
dc.contributor.authorAcar, Selim
dc.date.accessioned2025-03-23T19:37:52Z
dc.date.available2025-03-23T19:37:52Z
dc.date.issued2024
dc.departmentSinop Üniversitesi
dc.description.abstractIn this study, we report a chemical precursor-dependent dual effect of doping on the gas-sensing performance of metal oxide semiconducting materials. Our findings challenge the conventional notion that optimal doping consistently enhances gas-sensing properties. Acetate and nitrate salts were used as chemical precursors, lanthanum (La) was used as a dopant, and ZnO was used as a semiconducting material. All materials were synthesized under identical conditions by a two-step process involving dip coating and hydrothermal methods. Gas-sensing results demonstrated an improvement in the performance of the acetate-based doped film and a decline in that of the nitrate-based doped film compared to their respective pure counterparts. Among the produced sensors, 1 wt% La-doped ZnO sensor produced by the acetate precursor proved to be convenient for usages in real markets. It showed superior performance with a high response (62) at a relatively low operating temperature (150degree celsius) towards 50 ppm of NH3 gas. The sensor also demonstrated exceptional baseline stability, high short-term and long-term consistency, good selectivity, and strong tolerance to humidity (up to 70 RH%) with slightly slow adsorption-desorption rates. The dual effect was discussed with respect to dopant- and precursor-induced variations in structural and surficial characteristics, revealed by XRD, Raman, FESEM, AFM, and XPS. The discussion delved deeper into the role of chemical precursors on nanostructure growth and, for the first time, illuminated a temperature-dependent complex gas-sensing principle governed by the detected p-n shift of the semiconductor type of the sensing elements, confirmed by Hall effect.
dc.description.sponsorshipScientific Research Fund Unit at Gazi University [FDK-2021-7222]
dc.description.sponsorshipThe authors are grateful to the Scientific Research Fund Unit at Gazi University for the generous support of this work under project code: FDK-2021-7222.
dc.identifier.doi10.1016/j.snb.2024.136501
dc.identifier.issn0925-4005
dc.identifier.scopus2-s2.0-85201759083
dc.identifier.scopusqualityN/A
dc.identifier.urihttps://doi.org/10.1016/j.snb.2024.136501
dc.identifier.urihttps://hdl.handle.net/11486/6034
dc.identifier.volume420
dc.identifier.wosWOS:001301568200001
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Science Sa
dc.relation.ispartofSensors and Actuators B-Chemical
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20250323
dc.subjectZnO
dc.subjectLanthanum
dc.subjectDoping
dc.subjectPrecursor
dc.subjectp-n shift
dc.subjectNH3 gas sensor
dc.titleChemical precursor-dependent dual effect of doping on the gas-sensing performance of metal oxide semiconducting materials
dc.typeArticle

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