Influence of Al2O3 barrier on the interfacial electronic structure of Au/Ti/n-GaAs structures

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dc.contributor.authorKarabulut, Abdulkerim
dc.contributor.authorEfeoglu, Hasan
dc.contributor.authorTurut, Abdulmecit
dc.date.accessioned2025-03-23T19:34:38Z
dc.date.available2025-03-23T19:34:38Z
dc.date.issued2017
dc.departmentSinop Üniversitesi
dc.description.abstractThe Au/Ti/n-GaAs structures with and without Al2O3 interfacial layer have been fabricated. The Al2O3 interfacial layer has been formed on the GaAs substrate by atomic layer deposition. The effects of the interfacial layer on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the devices have been investigated in the temperature range of 60-300 K. It has been seen that the carrier concentration from C-V characteristics for the MIS (metal/insulating layer/semiconductor) diode with Al2O3 interfacial layer has a higher value than that for the reference diode without the Al2O3 interfacial layer (MS). Such a difference in the doping concentration has been attributed not to doping variation in the semiconductor bulk but to the presence of the Al2O3 interfacial layer because both diodes have been made on the pieces cut from the same n-type GaAs wafer. The temperature-dependent I-V characteristics of the MIS diode do not obey the thermionic emission current theory because of the presence of the Al2O3 layer. An electron tunneling factor, a delta(chi)(1/2), value of 20.64 has been found from the I-V-T data of the MIS diode. An average value of 0.627 eV for the mean tunneling barrier height, chi, presented by the Al2O3 layer has been obtained.
dc.identifier.doi10.1088/1674-4926/38/5/054003
dc.identifier.issn1674-4926
dc.identifier.issue5
dc.identifier.scopus2-s2.0-85021080571
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1088/1674-4926/38/5/054003
dc.identifier.urihttps://hdl.handle.net/11486/5690
dc.identifier.volume38
dc.identifier.wosWOS:000404294200009
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherIop Publishing Ltd
dc.relation.ispartofJournal of Semiconductors
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20250323
dc.subjectmetal-insulating layer-semiconductor contacts
dc.subjectatomic layer deposition
dc.subjectSchottky diodes
dc.subjectbarrier inhomogeneity
dc.titleInfluence of Al2O3 barrier on the interfacial electronic structure of Au/Ti/n-GaAs structures
dc.typeArticle

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