Interface controlling study of silicon based Schottky diode by organic layer

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dc.authoridAtif, Muhammad/0000-0002-7356-4275
dc.contributor.authorImer, Arife Gencer
dc.contributor.authorKorkut, A.
dc.contributor.authorFarooq, W. A.
dc.contributor.authorDere, A.
dc.contributor.authorAtif, M.
dc.contributor.authorHanif, Atif
dc.contributor.authorKarabulut, Abdulkerim
dc.date.accessioned2025-03-23T19:44:24Z
dc.date.available2025-03-23T19:44:24Z
dc.date.issued2019
dc.departmentSinop Üniversitesi
dc.description.abstractThe organic layer-on- insulator-semiconductor structures have attracted most attention owing to their great significance on technological applications. The interface of silicon based metal/semiconductor diode was improved using an organic layer. In this study, Sn/p-Si MS contact and Sn/C14H15N3/p-Si MIS heterojunction were fabricated via spin coating method. The electrical parameters of both devices have been investigated, and compared using the current-voltage (I-V) and capacitance-voltage (C-V) data at room temperature. The ideality factor of diodes with and without organic interfacial layer was calculated as 1.33 and 1.28, respectively. The values of barrier height were estimated as 0.69 and 0.81 eV for the MS and MIS type structure, respectively. Additionally, the values of series resistances for both diodes were determined as 1.27 and 1.19 k omega from Norde functions, respectively. The barrier height values were also examined using the reverse bias C-2-V characteristics for both diodes, and compared with results obtained from I to V data. The experimental results confirmed that the barrier height of Sn/C14H15N3/p-Si MIS structure is considerably higher than that of traditional Sn/p-Si MS diode. The performance and quality of these type devices could be improved and controlled by inserting the organic interfacial layer between the metal and semiconductor.
dc.identifier.doi10.1007/s10854-019-02282-0
dc.identifier.endpage19246
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue21
dc.identifier.scopus2-s2.0-85073955653
dc.identifier.scopusqualityQ2
dc.identifier.startpage19239
dc.identifier.urihttps://doi.org/10.1007/s10854-019-02282-0
dc.identifier.urihttps://hdl.handle.net/11486/6920
dc.identifier.volume30
dc.identifier.wosWOS:000492443000011
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal of Materials Science-Materials in Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20250323
dc.subjectBarrier Height Enhancement
dc.subjectN-Type Silicon/Metal
dc.subjectI-V-T
dc.subjectElectrical Characteristics
dc.subjectPhotovoltaic Properties
dc.subjectJunction
dc.subjectSemiconductors
dc.subjectTemperature
dc.subjectPerformance
dc.subjectMechanism
dc.titleInterface controlling study of silicon based Schottky diode by organic layer
dc.typeArticle

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