Comparative investigation on electronic properties of metal-semiconductor structures with variable ZnO thin film thickness for sensor applications

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dc.authoridKurnaz, Sedat/0000-0003-3657-2628
dc.contributor.authorCicek, Osman
dc.contributor.authorKurnaz, Sedat
dc.contributor.authorBekar, Atakan
dc.contributor.authorOzturk, Ozgur
dc.date.accessioned2025-03-23T19:41:49Z
dc.date.available2025-03-23T19:41:49Z
dc.date.issued2019
dc.departmentSinop Üniversitesi
dc.description.abstractIn this work, AuPd/n-GaAs and Ag/n-GaAs metal-semiconductor structures, which is known as Schottky Junction Structures (SJSs), with various ZnO thin film thickness (25-250 nm) classified as Group AuPd and Group Ag were produced to investigate electronic properties on SJSs. The current-voltage (I-V) characteristics of SJSs operating in their forward and reverse regions operating at +/- 3 V were measured at room temperature (295 K). The electronics parameters such as the series resistance (R-s), the shunt resistance (R-sh), the ideality factor (n) and the barrier height (Phi(B0)) were calculated by using thermionic emission (TE) theory, Ohm's law, Cheung and Cheung's function and modified Norde's function. Labview (R) based characterization tool developed to calculate the electronic parameters. The results were compared according to the various thicknesses and different rectifier contacts. Experimentally, if the results are analysed for each group, a (gradual) decrease in ZnO thicknesses is caused by an increase in the values of n, Phi(B0), RR. In addition, the R-sh, values were significantly increased while the R-s values were almost close to each other. As the Phi(B0) values, while compatible with the values found in the Cheung and Cheung's function, they are slightly higher than the values found in the TE theory. On the other hand, due to the voltage-dependent barrier height and nature of the used method, Phi(B0) values from modified Norde's function are a little higher than the TE theory. Finally, it can be clearly seen that electronic parameters of SJSs based on sensor applications can be arranged with various thicknesses according to extracted results.
dc.description.sponsorshipKastamonu University, Central Research Laboratory
dc.description.sponsorshipThe authors would like to thank Kastamonu University, Central Research Laboratory and its research team for their supports and contributions during this study.
dc.identifier.doi10.1016/j.compositesb.2019.106987
dc.identifier.issn1359-8368
dc.identifier.issn1879-1069
dc.identifier.scopus2-s2.0-85067054275
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1016/j.compositesb.2019.106987
dc.identifier.urihttps://hdl.handle.net/11486/6655
dc.identifier.volume174
dc.identifier.wosWOS:000485853800019
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Sci Ltd
dc.relation.ispartofComposites Part B-Engineering
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20250323
dc.subjectLayered structures
dc.subjectnano-structures
dc.subjectThin films
dc.subjectElectrical properties
dc.titleComparative investigation on electronic properties of metal-semiconductor structures with variable ZnO thin film thickness for sensor applications
dc.typeArticle

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