SILAR Controlled CdS Nanoparticles Sensitized CdO Diode Based Photodetectors

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dc.authoridArif, Bilal/0000-0001-7032-2679
dc.contributor.authorGozeh, Bestoon Anwer
dc.contributor.authorKarabulut, Abdulkerim
dc.contributor.authorYildiz, Abdulkadir
dc.contributor.authorDere, A.
dc.contributor.authorArif, Bilal
dc.contributor.authorYakuphanoglu, Fahrettin
dc.date.accessioned2025-03-23T19:42:23Z
dc.date.available2025-03-23T19:42:23Z
dc.date.issued2020
dc.departmentSinop Üniversitesi
dc.description.abstractIn this research, we have produced Al/CdS nanoparticles-CdO/p-si/Al photodetetor and investigated its optical and electrical characteristics for various optoelectronic applications. The CdO thin film was covered by using sol-gel spin coating method onto the silicon, followed by CdS nanoparticles constitution by the help of SILAR technique. In order to examine the morphological and optical characteristics of fabricated photodetector, the field emission scanning electron microscopy and UV-Vis spectroscopy were utilized, and the band gap of the prepared film was determined as 2,17 eV with the help of these analyzes. The current behavior against the varying voltage values were investigated for the different intensities of solar light conditions and the significant diode parameters were computed by the use of this measurements. As a result of this computation, the barrier height value was found to be 0.49 eV while the ideality factor value was 3.2, and the photoresponse of the photodetector was measured as approximatelly 2.65 x 10(3). Besides, the transient photocurrent and photocapacitance charactersitics were examined for distinct light conditions. Finally, the interface states were calculated from the capacitance/conductance-voltage (C/G-V) measurements.
dc.description.sponsorshipScientific Research Projects Foundation (BAP) of Kahramanmaras, Sutcu Imam University [2017/1e72 D.]
dc.description.sponsorshipThis work was supported by Scientific Research Projects Foundation (BAP) of Kahramanmaras, Sutcu Imam University under Grant No. 2017/1e72 D.
dc.identifier.doi10.1007/s12633-019-00266-7
dc.identifier.endpage1681
dc.identifier.issn1876-990X
dc.identifier.issn1876-9918
dc.identifier.issue7
dc.identifier.scopus2-s2.0-85073954794
dc.identifier.scopusqualityQ2
dc.identifier.startpage1673
dc.identifier.urihttps://doi.org/10.1007/s12633-019-00266-7
dc.identifier.urihttps://hdl.handle.net/11486/6782
dc.identifier.volume12
dc.identifier.wosWOS:000501127000001
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofSilicon
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20250323
dc.subjectOptical characteristics
dc.subjectCdS nanoparticles
dc.subjectCdO thin film
dc.subjectElectrical characteristics
dc.subjectSol-gel method
dc.subjectSILAR method
dc.titleSILAR Controlled CdS Nanoparticles Sensitized CdO Diode Based Photodetectors
dc.typeArticle

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