The photovoltaic impact of atomic layer deposited TiO2 interfacial layer on Si-based photodiodes

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dc.contributor.authorKarabulut, Abdulkerim
dc.contributor.authorOrak, Ikram
dc.contributor.authorTurut, Abdulmecit
dc.date.accessioned2025-03-23T19:37:51Z
dc.date.available2025-03-23T19:37:51Z
dc.date.issued2018
dc.departmentSinop Üniversitesi
dc.description.abstractIn present work, photocurrent, current- voltage (I-V) and capacitance/conductance-voltage- frequency (C/G-V-f) measurements were analyzed for the photodiode and diode parameters of Al/TiO2/p-Si structure. The TiO2 thin film structure was deposited on p-Si by using atomic layer deposition technique (ALD) and its thickness was about 10 nm. The surface morphology of TiO2 coated on p-Si structure was observed via atomic force microscope (AFM). Barrier height (Phi(b)) and ideality factor (n) values of device were found to be 0.80 eV, 0.70 eV, 0.56 eV and 1.04, 2.24, 10.27 under dark, 10 and 100 mW/cm(2), respectively. Some photodiodes parameters such as fill factor (FF), power efficiency (%eta), open circuit voltage (V-oc), short circuit current (I-sc) were obtained from I-V measurement under different light intensity. FF and. were accounted 49.2, 39,0 and 0.05, 0.45 under 10 and 100 mW/cm(2) light power intensity, respectively. C-2-V graph was plotted from C-V-f measurements and zero bias voltage (V-0), donor concentration (N-d), Fermi energy (E-F), barrier height (Phi(b)) and maximum electric field (E-m) were determined from C-2-V data for different frequencies. The electrical and photocurrent values demonstrated that it can be used for photodiode, photo detector and photo sensing applications.
dc.description.sponsorshipScientific Research Projects Unit of Sinop University [MMF-1901-15-02]
dc.description.sponsorshipThis work was supported by the Scientific Research Projects Unit of Sinop University, Project No. MMF-1901-15-02. The authors would like to thank Sinop University.
dc.identifier.doi10.1016/j.sse.2018.02.016
dc.identifier.endpage48
dc.identifier.issn0038-1101
dc.identifier.issn1879-2405
dc.identifier.scopus2-s2.0-85042917418
dc.identifier.scopusqualityQ3
dc.identifier.startpage39
dc.identifier.urihttps://doi.org/10.1016/j.sse.2018.02.016
dc.identifier.urihttps://hdl.handle.net/11486/6028
dc.identifier.volume144
dc.identifier.wosWOS:000430182000008
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherPergamon-Elsevier Science Ltd
dc.relation.ispartofSolid-State Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20250323
dc.subjectPhotodiodes
dc.subjectTiO2
dc.subjectAtomic layer deposition
dc.subjectElectrical characterization
dc.titleThe photovoltaic impact of atomic layer deposited TiO2 interfacial layer on Si-based photodiodes
dc.typeArticle

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