Temperature-dependent electrical characteristics of Alq3/p-Si heterojunction

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dc.authoridYILDIRIM, Nezir/0000-0002-1864-2269
dc.contributor.authorKarabulut, Abdulkerim
dc.contributor.authorOrak, Ikram
dc.contributor.authorCanli, Serdal
dc.contributor.authorYildirim, Nezir
dc.contributor.authorTurut, Abdulmecit
dc.date.accessioned2025-03-23T19:39:00Z
dc.date.available2025-03-23T19:39:00Z
dc.date.issued2018
dc.departmentSinop Üniversitesi
dc.description.abstractAl/Alq3(organic materials)/p-Si device was fabricated by the use of spin coaling technique, and it was investigated by using current-voltage measurement in a wide temperature range from 80 to 320 K with 20 K steps. Some device parameters such as ideality factor, barrier height and series resistance values were determined by the use of standard thermionic emission theory and Norde functions, and the values found were compared with other studies. It was seen that all parameters of fabricated device strongly depended on temperature changes. AFM and SEM images were taken for better understanding surface morphology, and addressed in detail. The results of experiments suggest that the fabricated device with Alq3 organic interfacial layer could be used effectively in the temperature-dependent device applications for developing electronic technology.
dc.description.sponsorshipScientific Research Projects Unit of Sinop University [MMF-1901-18-33]
dc.description.sponsorshipThis work was supported by the Scientific Research Projects Unit of Sinop University, Project No. MMF-1901-18-33. The authors would like to thank Sinop University.
dc.identifier.doi10.1016/j.physb.2018.08.029
dc.identifier.endpage74
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.scopus2-s2.0-85054690622
dc.identifier.scopusqualityQ2
dc.identifier.startpage68
dc.identifier.urihttps://doi.org/10.1016/j.physb.2018.08.029
dc.identifier.urihttps://hdl.handle.net/11486/6264
dc.identifier.volume550
dc.identifier.wosWOS:000452280400010
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Science Bv
dc.relation.ispartofPhysica B-Condensed Matter
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20250323
dc.subjectElectrical characteristics
dc.subjectAlq3
dc.subjectSpin coating
dc.subjectOrganic interfacial layer
dc.subjectHeterojunction
dc.titleTemperature-dependent electrical characteristics of Alq3/p-Si heterojunction
dc.typeArticle

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