Dielectric Characterization of Si-Based Heterojunction with TiO2 Interfacial Layer TiO2

Basit Öğe Kaydı
dc.contributor.authorKarabulut, Abdulkerim
dc.date.accessioned2025-03-23T19:10:22Z
dc.date.available2025-03-23T19:10:22Z
dc.date.issued2018
dc.departmentSinop Üniversitesi
dc.description.abstractIn this study, Al/TiO2/p-Si/Al heterojunction is fabricated and investigated some electrical and dielectriccharacteristics. Atomic layer deposition technique was used for synthesize of TiO2 interfacial layer due to the someadvantages such as uniformity and stability of surface. For determining electrical and dielectric characteristics,impedance spectroscopy measurements were performed in range from -1 to +1 V bias voltages and 10 kHz-1MHzfrequency range at room temperature. As an electrical parameters, interface states distribution and series resistancevalues was determined. In addition to these, it is found that the dielectric properties such as dielectric loss andconstant, real and imaginary parts of electric modulus, loss tangent and AC electric conductivity values wasdepended on frequency and voltage strongly. The electrical and dielectric characteristics show that interface statesand polarization values of fabricated device can follow AC signal at low frequency values
dc.identifier.doi10.21597/jist.418869
dc.identifier.endpage129
dc.identifier.issn2146-0574
dc.identifier.issn2536-4618
dc.identifier.issue3
dc.identifier.startpage119
dc.identifier.trdizinid290768
dc.identifier.urihttps://doi.org/10.21597/jist.418869
dc.identifier.urihttps://search.trdizin.gov.tr/tr/yayin/detay/290768
dc.identifier.urihttps://hdl.handle.net/11486/3607
dc.identifier.volume8
dc.indekslendigikaynakTR-Dizin
dc.institutionauthorKarabulut, Abdulkerim
dc.language.isoen
dc.relation.ispartofIğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi
dc.relation.publicationcategoryMakale - Ulusal Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_TR_20250323
dc.subjectNanobilim ve Nanoteknoloji
dc.subjectFizik
dc.subjectKatı Hal
dc.subjectFizikokimya
dc.subjectMühendislik
dc.subjectKimya
dc.titleDielectric Characterization of Si-Based Heterojunction with TiO2 Interfacial Layer TiO2
dc.typeArticle

Dosyalar

Koleksiyon

TR-Dizin İndeksli Yayınlar Koleksiyonu