Dielectric Characterization of Si-Based Heterojunction with TiO2 Interfacial Layer TiO2
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Tarih
2018
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
In this study, Al/TiO2/p-Si/Al heterojunction is fabricated and investigated some electrical and dielectriccharacteristics. Atomic layer deposition technique was used for synthesize of TiO2 interfacial layer due to the someadvantages such as uniformity and stability of surface. For determining electrical and dielectric characteristics,impedance spectroscopy measurements were performed in range from -1 to +1 V bias voltages and 10 kHz-1MHzfrequency range at room temperature. As an electrical parameters, interface states distribution and series resistancevalues was determined. In addition to these, it is found that the dielectric properties such as dielectric loss andconstant, real and imaginary parts of electric modulus, loss tangent and AC electric conductivity values wasdepended on frequency and voltage strongly. The electrical and dielectric characteristics show that interface statesand polarization values of fabricated device can follow AC signal at low frequency values
Açıklama
Anahtar Kelimeler
Nanobilim ve Nanoteknoloji, Fizik, Katı Hal, Fizikokimya, Mühendislik, Kimya
Kaynak
Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi
WoS Q Değeri
Scopus Q Değeri
Cilt
8
Sayı
3
