The effects of temperature and frequency changes on the electrical characteristics of hot-injected Cu2MnSnS4 chalcogenide-based heterojunction

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dc.authoridOZEL, faruk/0000-0002-3689-0469
dc.authoridSAHINKAYA, MEHMET AKIF/0000-0001-6461-8959
dc.contributor.authorSarilmaz, Adem
dc.contributor.authorOzel, Faruk
dc.contributor.authorKarabulut, Abdulkerim
dc.contributor.authorOrak, Ikram
dc.contributor.authorSahinkaya, Mehmet Akif
dc.date.accessioned2025-03-23T19:39:00Z
dc.date.available2025-03-23T19:39:00Z
dc.date.issued2020
dc.departmentSinop Üniversitesi
dc.description.abstractCu2MnSnS4 chalcogenide was obtained with the help of hot-injection technique and used as an interfacial thin layer to examine its behavior under varying temperature and frequency conditions. The well-known XRD, SEM and EDX techniques were utilized in the analysis of structural and content. To investigate the electrical properties, the variations in current, capacitance, conductance and impedance depending on the changing voltage were investigated. In the current-voltage measurements, measurements were made in distinct temperatures in addition to room temperature, and the effect of the temperature on the basic electrical parameters such as barrier height and ideality factor was investigated. The results showed that the temperature significantly affected the electrical properties. However, capacitance, impedance and conductance measurements were carried out for various frequencies. The performed experiments indicate that the fabricated heterojunction-based device using Cu2MnSnS4 chalcogenide could be evaluated in the wide temperature applications and enhanced as a capacitor in the electronic technology.
dc.description.sponsorshipKaramanoglu Mehmetbey University BILTEM (Scientific and Technological Research and Application Center); TUBITAK (The Scientific and Technological Research Council of Turkey) [217M212]
dc.description.sponsorshipThis work is supported by Karamanoglu Mehmetbey University BILTEM (Scientific and Technological Research and Application Center) and TUBITAK (The Scientific and Technological Research Council of Turkey) under project number 217M212.
dc.identifier.doi10.1016/j.physb.2019.411821
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.scopus2-s2.0-85075374531
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1016/j.physb.2019.411821
dc.identifier.urihttps://hdl.handle.net/11486/6262
dc.identifier.volume580
dc.identifier.wosWOS:000510641000031
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofPhysica B-Condensed Matter
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20250323
dc.subjectElectrical characterization
dc.subjectCu2MnSnS4 (CMTS) chalcogenide
dc.subjectTemperature and frequency effects
dc.subjectHot-injection technique
dc.titleThe effects of temperature and frequency changes on the electrical characteristics of hot-injected Cu2MnSnS4 chalcogenide-based heterojunction
dc.typeArticle

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