Fabrication of p-Si/n-ZnO:Al heterojunction diode and determination of electrical parameters

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dc.authoridCAGLAR, Mujdat/0000-0001-9724-7664
dc.authoridCaglar, Yasemin/0000-0001-8462-0925
dc.contributor.authorIlican, Saliha
dc.contributor.authorGorgun, Kamuran
dc.contributor.authorAksoy, Seval
dc.contributor.authorCaglar, Yasemin
dc.contributor.authorCaglar, Mujdat
dc.date.accessioned2025-03-23T19:39:37Z
dc.date.available2025-03-23T19:39:37Z
dc.date.issued2018
dc.departmentSinop Üniversitesi
dc.description.abstractWe present a fundamental experimental study of a microwave assisted chemical bath deposition (MW-CBD) method for Al doped ZnO films. Field emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD) spectroscopy were used to analyze the microstructures and crystalline structures of these films, respectively. The p-Si/n-ZnO:Al heterojunction diodes were fabricated. The current-voltage (I-V) characteristics of these diodes were measured at room temperature. The important electrical parameters such as series resistance, the ideality factor and the barrier height were determined by performing plots from the forward bias I-V characteristics using different methods. The obtained results indicate that Al doping improve the electrical properties of the p-Si/n-ZnO diode. The best rectification properties were observed in the p-Si/n-ZnO:5%Al heterojunction diode, so only capacitance-voltage (C-V) measurements of this diode were taken. Electrical parameter values such as series resistance, the built-in potential and the acceptor concentration calculated for this heterojunction diode. (C) 2017 Elsevier B.V. All rights reserved.
dc.description.sponsorshipAnadolu University Commission of Scientific Research [1402F055, 1605F449]
dc.description.sponsorshipThis work was supported by Anadolu University Commission of Scientific Research Projects under Grant No. 1402F055 and 1605F449.
dc.identifier.doi10.1016/j.molstruc.2017.11.121
dc.identifier.endpage683
dc.identifier.issn0022-2860
dc.identifier.issn1872-8014
dc.identifier.scopus2-s2.0-85038113763
dc.identifier.scopusqualityQ1
dc.identifier.startpage675
dc.identifier.urihttps://doi.org/10.1016/j.molstruc.2017.11.121
dc.identifier.urihttps://hdl.handle.net/11486/6391
dc.identifier.volume1156
dc.identifier.wosWOS:000425075900078
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Science Bv
dc.relation.ispartofJournal of Molecular Structure
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20250323
dc.subjectAl doped ZnO films
dc.subjectMicrowave assisted chemical bath
dc.subjectdeposition
dc.subjectHeterojunction diode
dc.subjectHexagonal rods
dc.titleFabrication of p-Si/n-ZnO:Al heterojunction diode and determination of electrical parameters
dc.typeArticle

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