The Characteristic Parameters of Ni/n-6H-SiC Devices Over a Wide Measurement Temperature Range
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Tarih
2017
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Ni/n-type 6H-SiC/Ni Schottky barrier diodes (SBDs) have been prepared by the DC magnetron sputtering deposition technique. Their current-voltage characteristics (I-V) have been measured in the measurement temperature range of 40-400 K with steps of 20 K under dark conditions. The barrier height (BH) values from the temperature-dependent forward and reverse bias I-V characteristics by different methods coincide with each other which indicates the elimination of the polarity between the Si and C ions. The ideality factor value remains almost unchanged in the 160-400 K range, and below 160 K, it has the values of 1.57 at 140 K, and 3.82 at 60 K. The BH has the values of 0.79 eV at 400 K, and 0.71 eV at 300 K. The decrease in the BH is due to the fact that the current will preferentially flow through the lowest BH with decreasing temperature due to barrier inhomogeneity. The value of 0.71 eV at 300 K is in close agreement with the values of 0.65 and 0.83 eV reported from the forward bias I-V characteristics for the Ni /n-type 6H-SiC in the literature. Thus, it has been concluded that the reduced barrier devices are promising for applications in devices operating at cryogenic temperatures as infrared detectors, sensors in thermal imaging and small signal zero-bias rectifiers and microwave mixers.
Açıklama
Anahtar Kelimeler
Metal/semiconductor contacts, SiC, Schottky barrier diode, Double gaussian distribution, Barrier inhomogeneity
Kaynak
Silicon
WoS Q Değeri
Q3
Scopus Q Değeri
Q2
Cilt
9
Sayı
3
