Electrical characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures over a wide measurement temperature

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dc.contributor.authorTurut, A.
dc.contributor.authorKarabulut, A.
dc.contributor.authorEfeoglu, H.
dc.date.accessioned2025-03-23T19:48:36Z
dc.date.available2025-03-23T19:48:36Z
dc.date.issued2017
dc.departmentSinop Üniversitesi
dc.description.abstractWe have prepared the Au/Ti/Al2O3/n-GaAs structures and investigated their current-voltage (I-V) characteristics with the temperature (in 20-320K range) as a parameter, and current-temperature (I-T) characteristics with bias voltage as a parameter. The ultrathin Al2O3 metal-oxide layer on the n-GaAs substrate has been formed by atomic layer deposition (ALD) method. Ti(10nm) rectifying contacts have been fabricated on Al2O3/n-GaAs structure by DC magnetron sputtering. The ideality factor value has remained between 1.10-1.06 from 130 K to 320 K. The barrier height (BH) value has increased with a slope of alpha = -0.31 meV/K from 320 K to 110 K. Then, it has been seen that the decrease in the BH value from 110 K to 20 K obeys a double Gaussian distribution (GD) of the BHs due to the BH inhomogeneity. The experimental I-T characteristics have been interpreted by plotting the theoretical I-T characteristics with and without the GD based on the TE current theory at each bias voltage. Moreover, the BH values have been also determined from the Richardson curves plotted using the I-T data at each forward and reverse bias voltage. It has been observed that the BH reduction is higher under reverse bias voltage than under forward bias voltage regime due to the barrier inhomogeneity which is not recommended for the Schottky diode being a rectifying device.
dc.identifier.endpage433
dc.identifier.issn1454-4164
dc.identifier.issn1841-7132
dc.identifier.issue5-6
dc.identifier.scopus2-s2.0-85026636495
dc.identifier.scopusqualityQ4
dc.identifier.startpage424
dc.identifier.urihttps://hdl.handle.net/11486/7633
dc.identifier.volume19
dc.identifier.wosWOS:000410469700024
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherNatl Inst Optoelectronics
dc.relation.ispartofJournal of Optoelectronics and Advanced Materials
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20250323
dc.subjectMetal/Insulating layer/semiconductor (MIS) structures
dc.subjectAtomic layer deposition (ALD)
dc.subjectInhomogeneous barrier height
dc.subjectGaAs semiconductor
dc.subjectcurrent-voltage of MIS structures
dc.titleElectrical characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures over a wide measurement temperature
dc.typeArticle

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