Barrier height modification in Au/Ti/n-GaAs devices with a HfO2 interfacial layer formed by atomic layer deposition

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dc.contributor.authorKarabulut, Abdulkerim
dc.date.accessioned2025-03-23T19:42:36Z
dc.date.available2025-03-23T19:42:36Z
dc.date.issued2019
dc.departmentSinop Üniversitesi
dc.description.abstractX-ray photoelectron spectroscopy has been carried out to characterize the surface of the hafnia (HfO2) thin films grown on n-GaAs wafer by atomic layer deposition, and the surface morphology of the HfO2 layer on GaAs has been analysed using atomic force microscopy. The barrier height (BH) values of 1.03 and 0.93 eV (300 K) for the Au/Ti/HfO2/n-GaAs structures with 3- and 5-nm HfO2 interfacial layers, respectively, have been obtained from the I-V characteristics of the devices, which are higher than the value of 0.77 eV (300 K) for the Au/Ti/n-GaAs diode fabricated by us. Therefore, it can be said that the HfO2 thin layer at the metal/GaAs interface can also be used for BH modification as a gate insulator in GaAs metal-oxide semiconductor (MOS) capacitors and MOS field-effect transistors. The ideality factor values have been calculated as 1.028 and 2.72 eV at 400 and 60 K; and as 1.04 and 2.58 eV at 400 and 60 K for the metal-insulating layer-semiconductor (MIS) devices with 3- and 5-nm interfacial layers, respectively. The bias-dependent BH values have been calculated for the devices by both Norde's method and Gaussian distribution (GD) of BHs at each sample temperature. At 320 K, the phi b(V) value at 0.70 V for a 3-nm MIS diode is about 1.08 eV from the phi b(V)vs. V curve determined by the GD, and about 0.99 eV at 0.58 V for a 5-nm MIS diode. It has been seen that these bias-dependent BH values are in close agreement with those obtained by Norde's method for the same bias voltage values.
dc.identifier.doi10.1007/s12034-018-1696-x
dc.identifier.issn0250-4707
dc.identifier.issn0973-7669
dc.identifier.issue1
dc.identifier.scopus2-s2.0-85065834600
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1007/s12034-018-1696-x
dc.identifier.urihttps://hdl.handle.net/11486/6806
dc.identifier.volume42
dc.identifier.wosWOS:000455224200003
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorKarabulut, Abdulkerim
dc.language.isoen
dc.publisherIndian Acad Sciences
dc.relation.ispartofBulletin of Materials Science
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_WOS_20250323
dc.subjectBarrier height modification and inhomogeneous
dc.subjectbias-dependent barrier height
dc.subjectmetal-insulating layer-semiconductor (MIS) device
dc.subjectatomic layer deposition (ALD)
dc.subjecttemperature-dependent MIS diode parameters
dc.titleBarrier height modification in Au/Ti/n-GaAs devices with a HfO2 interfacial layer formed by atomic layer deposition
dc.typeArticle

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