Electronic and optoelectronic properties of Al/coumarin doped Pr2Se3-Tl2Se/p-Si devices

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dc.authoridAl-Sehemi, Abdullah G./0000-0002-6793-3038
dc.authoridAl-Ghamdi, Ahmed/0000-0002-5409-3770
dc.contributor.authorTataroglu, A.
dc.contributor.authorAhmedova, C.
dc.contributor.authorBarim, G.
dc.contributor.authorAl-Sehemi, Abdullah G.
dc.contributor.authorKarabulut, Abdulkerim
dc.contributor.authorAl-Ghamdi, Ahmed A.
dc.contributor.authorFarooq, W. A.
dc.date.accessioned2025-03-23T19:44:25Z
dc.date.available2025-03-23T19:44:25Z
dc.date.issued2018
dc.departmentSinop Üniversitesi
dc.description.abstractIn this study, coumarin-doped Pr2Se3-Tl2Se (0.00, 0.05, 0.1, 0.3 wt% coumarin) were covered on the front side of a p-Si substrate by drop coating method and thus Al/coumarin doped Pr2Se3-Tl2Se/p-Si diodes were fabricated. The electronic and optoelectronic properties of the prepared diodes were investigated. The highest rectification ratio (RR = I-F/I-R) value was found to be 2.24 x 10(5) for the diode having 0.05 wt% coumarin doping at dark and +/- 5 V. Also, the highest I-photo/I-dark photosensitivity was found to be 1327 for the diode which has 0.1 wt% coumarin doping at 100 mW/cm(2) and - 5 V. The photocurrent of the diodes is higher than the dark current and increases by the increase of the light intensity. These results confirm that the fabricated diodes show a strong photovoltaic behavior. The electronic parameters of the diodes, for example ideality factor and barrier height values, were calculated by the use of current-voltage characteristics. The transient measurement proves that the diodes show both photodiode and photocapacitor behaviors. The change on the conductance and capacitance by the frequency is attributed to the existence of interface states. Thus, the obtained results suggest that the prepared diodes might be used as a photosensor in the applications of optoelectronic.
dc.description.sponsorshipInternational Scientific Partnership Program ISPP at King Saud University through ISPP [0046]
dc.description.sponsorshipThe authors extend their appreciation to the International Scientific Partnership Program ISPP at King Saud University for funding this research work through ISPP# 0046.
dc.identifier.doi10.1007/s10854-018-9372-x
dc.identifier.endpage12572
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue15
dc.identifier.scopus2-s2.0-85048004106
dc.identifier.scopusqualityQ2
dc.identifier.startpage12561
dc.identifier.urihttps://doi.org/10.1007/s10854-018-9372-x
dc.identifier.urihttps://hdl.handle.net/11486/6924
dc.identifier.volume29
dc.identifier.wosWOS:000438679000006
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal of Materials Science-Materials in Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20250323
dc.subjectElectrical-Properties
dc.subjectCoumarin
dc.subjectPhotodetector
dc.subjectDependence
dc.subjectInterface
dc.subjectFrequency
dc.subjectState
dc.titleElectronic and optoelectronic properties of Al/coumarin doped Pr2Se3-Tl2Se/p-Si devices
dc.typeArticle

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