Effects of anisotropic surface drift diffusion on the strained heteroepitaxial nanoislands subjected to electromigration stressing

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dc.authoridCelik, Aytac/0000-0002-7867-9506
dc.authoridOren, Ersin Emre/0000-0001-5902-083X
dc.authoridOgurtani, Tarik/0000-0001-6519-940X
dc.contributor.authorOgurtani, Tarik Omer
dc.contributor.authorCelik, Aytac
dc.contributor.authorOren, Ersin Emre
dc.date.accessioned2025-03-23T19:35:40Z
dc.date.available2025-03-23T19:35:40Z
dc.date.issued2022
dc.departmentSinop Üniversitesi
dc.description.abstractA systematic study based on self-consistent dynamical simulations is presented for the morphological evolutionary behavior of an isolated thin Ge/Si nanoisland (quantum dot) on a rigid substrate exposed to electromigration forces. This morphological evolution is basically induced by the anisotropic surface drift diffusion, driven by the capillary forces, the lattice mismatch stresses, and the wetting potential. In this study, we have mainly focused on the size and shape development kinetics of quantum dots, known as the Stranski-Krastanov (SK) morphology, influenced by applied electromigration stresses. Emphasis is given to the effects of rotational symmetry associated with the anisotropic diffusivity in 2D space (i.e., quantum wires in 3D). The pointed bullet-shaped Stranski-Krastanov islands with high aspect ratios, xi = 0.77, are formed at the cathode edge, while the whole nanoisland slightly creeps out of the initial computational domain. The favorable configuration of the Ge-20/Si-80 alloy test module, which resulted in zeta = 0.37 enhancement in the contour surface area, has a dome shape attached to the [010] top surface of the Si substrate with a zone axis of {010}/< 001 >. The anisotropic surface diffusion dyadic has a fourfold rotational symmetry axis [001] lying on the (001) plane of the Si substrate, and its major axis is tilted at about phi = 45 degrees from the applied electrostatic field extended along the longitudinal axis [100] of the substrate. This particular experiment resulted in a SK singlet peak with a small satellite with a very small aspect ratio of approximately equal to 0.2 that may be appropriate for the conception of quantum optoelectronic devices or inter-band structures to generate photoelectrons having large energy spectra, thereby increasing the efficiency of photovoltaics exposed to solar radiations.
dc.description.sponsorshipDepartment of Metallurgy and Materials Engineering, at the Middle East Technical University; Turkish Scientific and Technological Research Council, TUBITAK [107M011, 111T343, 315M222]
dc.description.sponsorshipACKNOWLEDGMENTSThe authors thank Dr. Oncu Akyildiz of Hitit University for valuable assistance with the computer coding that has been used extensively in the simulation studies presented in this paper. This study was partially supported by the Department of Metallurgy and Materials Engineering, at the Middle East Technical University, and the Turkish Scientific and Technological Research Council, TUBITAK, through research Grant Nos. 107M011, 111T343, and 315M222.
dc.identifier.doi10.1063/5.0067760
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.issue7
dc.identifier.scopus2-s2.0-85125081640
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1063/5.0067760
dc.identifier.urihttps://hdl.handle.net/11486/5899
dc.identifier.volume131
dc.identifier.wosWOS:000760759700006
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherAip Publishing
dc.relation.ispartofJournal of Applied Physics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20250323
dc.subjectSingle-Crystal Films
dc.subjectThin-Film
dc.subjectMorphological Instability
dc.subjectIrreversible-Processes
dc.subjectReciprocal Relations
dc.subjectEvolution
dc.subjectCapillary
dc.subjectIslands
dc.subjectDriven
dc.subjectGe
dc.titleEffects of anisotropic surface drift diffusion on the strained heteroepitaxial nanoislands subjected to electromigration stressing
dc.typeArticle

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