SYNTHESIS AND CHARACTERIZATION OF La-DOPED ZnO (La:ZnO) FILMS FOR PHOTODETECTORS

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dc.contributor.authorGozeh, Bestoon Anwer
dc.contributor.authorKarabulut, Abdulkerim
dc.contributor.authorAmeen, Mudhaffer M.
dc.contributor.authorYildiz, Abdulkadir
dc.contributor.authorYakuphanoglu, Fahrettin
dc.date.accessioned2025-03-23T19:31:02Z
dc.date.available2025-03-23T19:31:02Z
dc.date.issued2020
dc.departmentSinop Üniversitesi
dc.description.abstractIn this work, the La-doped ZnO thin films were fabricated with different La concentrations by the use of sol-gel technique to synthesize the photodevice. The transparent metal oxide La-doped ZnO thin films were grown on glass and p-Si substrates using spin coating technique. Optical, surface morphology and electrical characterization of the fabricated Al/p-Si/La:ZnO/Al devices have been performed using I-V and C/G-V characteristics under dark and different illumination conditions. Herein, from I-V characteristics, the crucial electronic parameters such as barrier height, ideality factor and series resistance were investigated. The photodevice transient photocurrent increases with the increase of illumination intensity. The current ratios of I-on/I-off were calculated for the fabricated devices. Among the devices, the highest photoresponse was found to be about 2186 for the Al/p-Si/La(0.5 wt.%):ZnO/Al structure. The R-s-V behavior of fabricated device confirms the presence of interface states. The obtained results and photoresponse behaviors suggested that Al/p-Si/La:ZnO/Al devices can enhance the applications in optoelectronic devices such as photodetectors.
dc.description.sponsorshipScientific Research Projects Foundation (BAP) of Kahramanmaras Sutcu Imam University [2017/1e72 D.]
dc.description.sponsorshipThis work was supported by Scientific Research Projects Foundation (BAP) of Kahramanmaras Sutcu Imam University under Grant No. 2017/1e72 D.
dc.identifier.doi10.1142/S0218625X19501737
dc.identifier.issn0218-625X
dc.identifier.issn1793-6667
dc.identifier.issue7
dc.identifier.scopus2-s2.0-85075775749
dc.identifier.scopusqualityQ3
dc.identifier.urihttps://doi.org/10.1142/S0218625X19501737
dc.identifier.urihttps://hdl.handle.net/11486/5202
dc.identifier.volume27
dc.identifier.wosWOS:000552274100006
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherWorld Scientific Publ Co Pte Ltd
dc.relation.ispartofSurface Review and Letters
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20250323
dc.subjectElectrical characteristics
dc.subjectdoped ZnO
dc.subjectsol-gel
dc.subjectphotoresponse
dc.subjectphotodetector
dc.titleSYNTHESIS AND CHARACTERIZATION OF La-DOPED ZnO (La:ZnO) FILMS FOR PHOTODETECTORS
dc.typeArticle

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