Investigation of temperature dependent negative capacitance in the forward bias C-V characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs)

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dc.contributor.authorGuclu, C. S.
dc.contributor.authorOzdemir, A. F.
dc.contributor.authorKarabulut, A.
dc.contributor.authorKokce, A.
dc.contributor.authorAltindal, S.
dc.date.accessioned2025-03-23T19:39:15Z
dc.date.available2025-03-23T19:39:15Z
dc.date.issued2019
dc.departmentSinop Üniversitesi
dc.description.abstractIn this study, a metal-insulator-semiconductor (MIS) type Schottky barrier diodes (SBDs) were fabricated by growing a thin Al2O3 insulator layer between Au/Ti and n-GaAs using atomic layer deposition (ALD) method. The effect of temperature and voltage on interface states (N-ss) and series resistance (R-s) of the (Au/Ti)/Al2O3/n-GaAs (MIS) type Schottky barrier diodes (SBDs) was investigated using the capacitance/conductance-voltage (C/ (G/omega-V) data measured in wide range of temperature (200-380 K) and voltage (+/- 5 V). It was found that C and G/omega are strongly dependent on temperature and voltage. The value of C in the forward bias region reaches to maximum and then becomes negative. This negative capacitance (NC) behavior of this SBD is observed for each temperature level. Also, capacitance-current (C-I) and conductance-current (G/omega-I) plots were drawn to explain the NC behavior. The negative value of C in the accumulation region corresponds to the maximum value of G/omega. Such behavior of C can be explained by the loss of interface charges located at (Al2O3)/n-GaAs interface because of impact ionization process, the existence of surface states (N-ss), series resistance (R-s) and interfacial of (Al2O3) oxide layer.Therefore, the voltage dependent profiles of R-s and N-ss were obtained using Nicollian-Brews and Hill-Colleman methods for enough high forward biases as a function of temperature at various positive bias voltages. The changes in R-s and N-ss values were attributed to restructure and reordering of the carriers under temperature and voltage effects.
dc.description.sponsorshipSuleyman Demirel University Scientific Research Projects in Turkey [SDUBAP 4429-D2-15]; Gazi University Scientific Research Project in Turkey [GU-BAP.05/2018-10]
dc.description.sponsorshipThis work is financially supported by Suleyman Demirel University Scientific Research Projects (Project number: SDUBAP 4429-D2-15) and Gazi University Scientific Research Project (Project number: GU-BAP.05/2018-10) in Turkey.
dc.identifier.doi10.1016/j.mssp.2018.08.019
dc.identifier.endpage31
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.scopus2-s2.0-85052624648
dc.identifier.scopusqualityQ1
dc.identifier.startpage26
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2018.08.019
dc.identifier.urihttps://hdl.handle.net/11486/6299
dc.identifier.volume89
dc.identifier.wosWOS:000447004600004
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Sci Ltd
dc.relation.ispartofMaterials Science in Semiconductor Processing
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20250323
dc.subjectAu/Ti)/Al2O3/n-GaAs SBDs
dc.subjectAtomic layer deposition
dc.subjectNegative capacitance in the forward bias C-V curves
dc.subjectTemperature and voltage dependence
dc.titleInvestigation of temperature dependent negative capacitance in the forward bias C-V characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs)
dc.typeArticle

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