Capacitance-conductance-current-voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures

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dc.authoridBIYIKLI, Necmi/0000-0001-9387-5145
dc.contributor.authorTurut, A.
dc.contributor.authorKarabulut, A.
dc.contributor.authorEjderha, K.
dc.contributor.authorBiyikli, N.
dc.date.accessioned2025-03-23T19:39:15Z
dc.date.available2025-03-23T19:39:15Z
dc.date.issued2015
dc.departmentSinop Üniversitesi
dc.description.abstractWe have studied the admittance and current-voltage characteristics of the Au/Ti/Al2O3/n-GaAs structure. The Al2O3 layer of about 5 nm was formed on the n-GaAs by atomic layer deposition. The barrier height (BH) and ideality factor values of 1.18 eV and 2.45 were obtained from the forward-bias In I vs V plot at 300 K. The BH value of 1.18 eV is larger than the values reported for conventional Ti/n-GaAs or Au/Ti/n-GaAs diodes. The barrier modification is very important in metal semiconductor devices. The use of an increased barrier diode as the gate can provide an adequate barrier height for FET operation while the decreased barrier diodes also show promise as small signal zero-bias rectifiers and microwave. The experimental capacitance and conductance characteristics were corrected by taking into account the device series resistance Rs. It has been seen that the noncorrection characteristics cause a serious error in the extraction of the interfacial properties. Furthermore, the device behaved more capacitive at the reverse bias voltage range rather than the forward bias voltage range because the phase angle in the reverse bias has remained unchanged as 90 independent of the measurement frequency. (C) 2015 Elsevier Ltd. All rights reserved.
dc.identifier.doi10.1016/j.mssp.2015.05.025
dc.identifier.endpage407
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.scopus2-s2.0-84930663755
dc.identifier.scopusqualityQ1
dc.identifier.startpage400
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2015.05.025
dc.identifier.urihttps://hdl.handle.net/11486/6300
dc.identifier.volume39
dc.identifier.wosWOS:000361774100055
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Sci Ltd
dc.relation.ispartofMaterials Science in Semiconductor Processing
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20250323
dc.subjectSchottky-Barrier Diodes
dc.subjectElectrical Characteristics
dc.subjectInhomogeneous Barrier
dc.subjectDielectric-Properties
dc.subjectCurrent-Transport
dc.subjectInterface States
dc.subjectTemperature
dc.subjectFrequency
dc.subjectParameters
dc.subjectHeights
dc.titleCapacitance-conductance-current-voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures
dc.typeArticle

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