CuAlMnV shape memory alloy thin film based photosensitive diode

Basit Öğe Kaydı
dc.authoridAtif, Muhammad/0000-0002-7356-4275
dc.contributor.authorCanbay, C. Aksu
dc.contributor.authorTataroglu, A.
dc.contributor.authorFarooq, W. A.
dc.contributor.authorDere, A.
dc.contributor.authorKarabulut, Abdulkerim
dc.contributor.authorAtif, M.
dc.contributor.authorHanif, Atif
dc.date.accessioned2025-03-23T19:39:14Z
dc.date.available2025-03-23T19:39:14Z
dc.date.issued2020
dc.departmentSinop Üniversitesi
dc.description.abstractIn the present work, the polycrystalline quaternary shape memory alloy (SMA) using composition of Cu-10.24 Al-3.13 Mn-0.41 V (wt%) was prepared with arc melting technique. The produced SMA was characterized by X-ray diffraction (XRD) and differential scanning calorimetry (DSC). In order to fabricate the Schottky diode, the SMA was utilized as a Schottky contact on n-Si. The admittance (Y = G thorn i omega C) measurements were performed at different frequencies while the current-voltage (I-V) measurements of the prepared diode were performed at different light intensity conditions. The reverse bias current measured under illumination was found to be greater than the condition of dark. The obtained results approve that the diode displays a photoconducting behavior. The electrical parameters of diode were calculated from I-V data. Besides, the frequency impacts on the capacitance and conductance characteristics with regards to voltage were investigated. The experiments suggest that the fabricated diode could be chosen in the applications of the optoelectronic devices.
dc.description.sponsorshipFirat University Scientific Research Unit FUBAP [FF.18.12]; Deanship of Scientific Research at King Saud University [RG -1435-059]
dc.description.sponsorshipThis research work is financially supported by Firat University Scientific Research Unit FUBAP under the project number of FUBAP; FF.18.12. The authors would like to extend their sincere appreciation to the Deanship of Scientific Research at King Saud University for its funding of this research through the Research Group Project No. RG -1435-059.
dc.identifier.doi10.1016/j.mssp.2019.104858
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.scopus2-s2.0-85075310607
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2019.104858
dc.identifier.urihttps://hdl.handle.net/11486/6297
dc.identifier.volume107
dc.identifier.wosWOS:000505017100054
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Sci Ltd
dc.relation.ispartofMaterials Science in Semiconductor Processing
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_WOS_20250323
dc.subjectShape memory alloy
dc.subjectTransformation temperature
dc.subjectSchottky diode
dc.subjectMartensite
dc.subjectIllumination and frequency effect
dc.titleCuAlMnV shape memory alloy thin film based photosensitive diode
dc.typeArticle

Dosyalar

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu