Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-kinterfacial layer

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dc.contributor.authorKarabulut, Abdulkerim
dc.contributor.authorOrak, İkram
dc.contributor.authorTürüt, Abdülmecit
dc.date.accessioned2025-03-23T19:09:32Z
dc.date.available2025-03-23T19:09:32Z
dc.date.issued2018
dc.departmentSinop Üniversitesi
dc.description.abstractWe have fabricated, metal-insulator-semiconductor (MIS) structures, the Au/Ti/HfO2/n-GaAs. Metal rectifying contacts weremadebyDCmagnetronsputteringtechnique,and hafnium dioxide (HfO2) interfacial insulating layer with 3, 5 and 10 nm thickness has been formed by the atomic layer depositon (ALD) technique.The series resistance values from the forward biascurrent-voltage (I-V) curves of 3 nm and 5 nm MIS structures has reduced very slightly with a decrease in the measurement temperature. Thediode potentialbarrier height value from I-Vcharacteristics increased with increasing HfO2layer thickness. Thus, the diode potential barrier height.was changed using the interfacial layer of the hafnium dioxide.Barrier height increment is an important and desirable feature in the field effect transistors (FET) and microwave mixers.
dc.identifier.doi10.32571/ijct.456902
dc.identifier.endpage122
dc.identifier.issn2602-277X
dc.identifier.issue2
dc.identifier.startpage116
dc.identifier.trdizinid390355
dc.identifier.urihttps://doi.org/10.32571/ijct.456902
dc.identifier.urihttps://search.trdizin.gov.tr/tr/yayin/detay/390355
dc.identifier.urihttps://hdl.handle.net/11486/3391
dc.identifier.volume2
dc.indekslendigikaynakTR-Dizin
dc.language.isoen
dc.relation.ispartofInternational Journal of Chemistry and Technology (IJCT)
dc.relation.publicationcategoryMakale - Ulusal Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_TR_20250323
dc.subjectMühendislik
dc.subjectElektrik ve Elektronik
dc.subjectFizik
dc.subjectKatı Hal
dc.subjectMühendislik
dc.subjectKimya
dc.titleElectrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-kinterfacial layer
dc.typeArticle

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