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    Capacitance-conductance characteristics of Au/Ti/Al2O3/n-GaAs structures with very thin Al2O3 interfacial layer
    (Iop Publishing Ltd, 2015) Turut, A.; Karabulut, A.; Ejderha, K.; Biyikli, N.
    High-k Al2O3 with metallic oxide thickness of about 3 nm on n-type GaAs substrate has been deposited by the atomic layer deposition (ALD) technique. Thus, it has been formed the Au-Ti/Al2O3/n-GaAs MIS structures. It has been seen that the MIS structure exhibits excellent capacitance-voltage (C-V) and current-voltage (I-V) properties at 300 K. The saturation current of the forward bias and reverse bias I-V characteristics was the same value. An ideality factor value of 1.10 has been obtained from the forward bias I-V characteristics. The C-Vcharacteristics of the structure have shown almost no hysteresis from +3 V to -10 V with frequency as a parameter. The reverse bias C-V curves have exhibited a behavior without frequency dispersion and almost hysteresis at each frequency from 10 kHz to 1000 kHz.
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    Öğe
    Capacitance-conductance-current-voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures
    (Elsevier Sci Ltd, 2015) Turut, A.; Karabulut, A.; Ejderha, K.; Biyikli, N.
    We have studied the admittance and current-voltage characteristics of the Au/Ti/Al2O3/n-GaAs structure. The Al2O3 layer of about 5 nm was formed on the n-GaAs by atomic layer deposition. The barrier height (BH) and ideality factor values of 1.18 eV and 2.45 were obtained from the forward-bias In I vs V plot at 300 K. The BH value of 1.18 eV is larger than the values reported for conventional Ti/n-GaAs or Au/Ti/n-GaAs diodes. The barrier modification is very important in metal semiconductor devices. The use of an increased barrier diode as the gate can provide an adequate barrier height for FET operation while the decreased barrier diodes also show promise as small signal zero-bias rectifiers and microwave. The experimental capacitance and conductance characteristics were corrected by taking into account the device series resistance Rs. It has been seen that the noncorrection characteristics cause a serious error in the extraction of the interfacial properties. Furthermore, the device behaved more capacitive at the reverse bias voltage range rather than the forward bias voltage range because the phase angle in the reverse bias has remained unchanged as 90 independent of the measurement frequency. (C) 2015 Elsevier Ltd. All rights reserved.