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Öğe Semiconductor Type Dependent Comparison of Electrical Characteristics of Pt/InP Structures Fabricated by Magnetron Sputtering Technique in the Range of 20-400 K.(Nano-Micro Letters, 2013) Korkut, HatunThe paper describes how electrical properties of Pt/InP Schottky diode were affected by semiconductor type. We fabricated Pt/p-InP and Pt/n-InP Schottky diodes and measured electrical characteristics from 20 K to 400 K. Thicknesses of less than 30 nm of platinum were deposited on the two types of indium phosphide substrates using magnetron sputtering technique after the creation of Zn-Au ohmic back contact. We discussed basic diode parameters of idealiy factors, barrier heights and serries resistances of the two type of contacts. Additionly, unusual temperature characteristics of the the diodes were highlighted. These results were evaluated in terms of semiconductor type comparision of Pt/InP Schottky structures.Öğe A Microscopic Analysis on Shape of Ruthenium Isotopes(Romanian Journal of Physics, 2013) Bayram, Tuncay[Abstract Not Available]Öğe Natural Radioactivity Concentration of Peanuts in Osmaniye-Turkey.(AIP Conference Proceedings, 2012) Akkurt, İskender; Günoğlu, Kadir; Mavi, Betül; Kara, AyhanThe peanut is grown in Osmaniye where located in southern Turkey. Due to it is grown underground, the measurements of natural radioactivity of peanuts become important. For this reason some peanut samples have been collected from different places of Osmaniye and the measurements of natural activity concentrations for 40K, 226Ra and 232Th in some peanuts samples have been carried out using a NaI(Tl) gamma-ray spectrometer. Activity of 40K was measured from its intensive line at 1460 keV, for 226Ra activity peak from 214Bi at 1760 keV and 232Th activity, peak from 208Tl at energy of 2610 keV was used.
