Yazar "Yakuphanoglu, Fahrettin" seçeneğine göre listele

Listeleniyor 1 - 4 / 4
  • [ X ]
    Öğe
    SILAR Controlled CdS Nanoparticles Sensitized CdO Diode Based Photodetectors
    (Springer, 2020) Gozeh, Bestoon Anwer; Karabulut, Abdulkerim; Yildiz, Abdulkadir; Dere, A.; Arif, Bilal; Yakuphanoglu, Fahrettin
    In this research, we have produced Al/CdS nanoparticles-CdO/p-si/Al photodetetor and investigated its optical and electrical characteristics for various optoelectronic applications. The CdO thin film was covered by using sol-gel spin coating method onto the silicon, followed by CdS nanoparticles constitution by the help of SILAR technique. In order to examine the morphological and optical characteristics of fabricated photodetector, the field emission scanning electron microscopy and UV-Vis spectroscopy were utilized, and the band gap of the prepared film was determined as 2,17 eV with the help of these analyzes. The current behavior against the varying voltage values were investigated for the different intensities of solar light conditions and the significant diode parameters were computed by the use of this measurements. As a result of this computation, the barrier height value was found to be 0.49 eV while the ideality factor value was 3.2, and the photoresponse of the photodetector was measured as approximatelly 2.65 x 10(3). Besides, the transient photocurrent and photocapacitance charactersitics were examined for distinct light conditions. Finally, the interface states were calculated from the capacitance/conductance-voltage (C/G-V) measurements.
  • [ X ]
    Öğe
    Solar light responsive ZnO nanoparticles adjusted using Cd and La Co-dopant photodetector
    (Elsevier Science Sa, 2018) Gozeh, Bestoon Anwer; Karabulut, Abdulkerim; Yildiz, Abdulkadir; Yakuphanoglu, Fahrettin
    Optical sensing from the solar light range of light is very important for industrial process monitoring and life science. Hence, we present inorganic photodetector, operating between 200 and 1200 nm wavelength invented (Cd0.1/xLa co-doped ZnO, x = 0.1, 0.5, 2, and 4 wt%) nanoparticles thin films were synthesis onto p-Si and glass substrates by the Sol-gel spin coating technique. The films indicate that a high transmittance about 92% in the visible region. The optical bandgap of the thin films was used optical data demonstrated that the band gap of the films decreased with dopant concentration. The surface morphology and elemental compositions were investigated by SEM and EDX. The diodes exhibited high photocurrent responsivity under various illuminations. Herein, from I-V characteristics determined the electronic parameters such as ideality factor, barrier height and series resistance. The C-V and G-V of the diodes were investigated in the range of 10-1000 kHz. Moreover, an approach to improve the Ion/Ioff ratio (photoresponse) by modifying the concentration has been investigated under dark and light illuminations, respectively. The Al/p-type-Si/Cd-(0.1)-La((0.1))Wt/Al photodetector exhibited a highest photoresponse were found to be 2263. Finally, the interface states were determined to explain the results obtained in the present study. The obtained results suggest that Cd/La-co-doped ZnO/p-Si diodes can be enhanced and pave the way for its potential application in the optoelectronic devices e.g. photodetectors. (C) 2017 Elsevier B.V. All rights reserved.
  • [ X ]
    Öğe
    Solution-processable BODIPY decorated triazine photodiodes and their comprehensive photophysical evaluation
    (Royal Soc Chemistry, 2020) Aksoy, Burcu Topaloglu; Kesan, Gurkan; Ozcan, Emrah; Ecik, Esra Tannverdi; Dere, Aysegul; Karabulut, Abdulkerim; Yakuphanoglu, Fahrettin
    Solution-processed organic photodiodes can function as thin-film candidates for solid-state photosensors in various optoelectronic applications due to the physical and chemical tuneability. In spite of their exclusive optical, structural, and electronic properties, the development of BODIPY based organic phodiodes has lagged behind that of other luminescent chromophore units. Here, we demonstrate the design, synthesis, and characterization of new BODIPY decorated triazine tripods for next-generation solution-processed photosensor applications. The photophysical and thermal properties of the BODIPY decorated triazines were determined. Furthermore, the photo-electrochemical properties of the synthesized compounds have been studied in detail using a photoconductivity measurement system. The potential of the prepared diodes as sensors in solar tracking systems has been investigated. Also, quantum chemical calculations were applied to those compounds to examine the effect of both OH groups and different binding positions on those compounds in comparison with experimentally observed data. As a potential application area, the photodiode properties of the designed molecules were tested here. The obtained photoelectrical results indicate that BODIPY decorated triazine tripod based photodiodes can be used as a photosensor in optic control systems.
  • [ X ]
    Öğe
    SYNTHESIS AND CHARACTERIZATION OF La-DOPED ZnO (La:ZnO) FILMS FOR PHOTODETECTORS
    (World Scientific Publ Co Pte Ltd, 2020) Gozeh, Bestoon Anwer; Karabulut, Abdulkerim; Ameen, Mudhaffer M.; Yildiz, Abdulkadir; Yakuphanoglu, Fahrettin
    In this work, the La-doped ZnO thin films were fabricated with different La concentrations by the use of sol-gel technique to synthesize the photodevice. The transparent metal oxide La-doped ZnO thin films were grown on glass and p-Si substrates using spin coating technique. Optical, surface morphology and electrical characterization of the fabricated Al/p-Si/La:ZnO/Al devices have been performed using I-V and C/G-V characteristics under dark and different illumination conditions. Herein, from I-V characteristics, the crucial electronic parameters such as barrier height, ideality factor and series resistance were investigated. The photodevice transient photocurrent increases with the increase of illumination intensity. The current ratios of I-on/I-off were calculated for the fabricated devices. Among the devices, the highest photoresponse was found to be about 2186 for the Al/p-Si/La(0.5 wt.%):ZnO/Al structure. The R-s-V behavior of fabricated device confirms the presence of interface states. The obtained results and photoresponse behaviors suggested that Al/p-Si/La:ZnO/Al devices can enhance the applications in optoelectronic devices such as photodetectors.