Yazar "Tataroglu, A." seçeneğine göre listele

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    Öğe
    Cu-Al-Mn shape memory alloy based Schottky diode formed on Si
    (Elsevier, 2019) Aldirmaz, E.; Tataroglu, A.; Dere, A.; Guler, M.; Guler, E.; Karabulut, A.; Yakuphanoglu, F.
    In this work, martensite was made over the wide temperature ranges and the two forms of martensite morphology in Cu85.41Al9.97Mn4.62 shape memory alloy (SMA) were beta' and gamma' martensite phases. The SMA was characterized by the use of X-ray diffraction (XRD) and scanning electron microscopy (SEM) analyses. In order to fabricate the Schottky diode, Cu-Al-Mn alloy was used as a Schottky contact on p-type Si semiconductor substrate. Some of the crucial parameters for diodes such as ideality factor and barrier height values were obtained from electrical measurements. Illumination-dependent measurements showed that the fabricated device presents the behaviors of photodiode and photoconducting. Besides, it is found that the fabricated diode's structure is sensitive to illumination. Frequency-dependent measurements also indicated that the series resistance and interface state parameters are crucial to affect electrical characteristics of the fabricated diode. The experimental results showed that the fabricated Schottky device could be used in variety of optoelectronic applications.
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    Öğe
    CuAlMnV shape memory alloy thin film based photosensitive diode
    (Elsevier Sci Ltd, 2020) Canbay, C. Aksu; Tataroglu, A.; Farooq, W. A.; Dere, A.; Karabulut, Abdulkerim; Atif, M.; Hanif, Atif
    In the present work, the polycrystalline quaternary shape memory alloy (SMA) using composition of Cu-10.24 Al-3.13 Mn-0.41 V (wt%) was prepared with arc melting technique. The produced SMA was characterized by X-ray diffraction (XRD) and differential scanning calorimetry (DSC). In order to fabricate the Schottky diode, the SMA was utilized as a Schottky contact on n-Si. The admittance (Y = G thorn i omega C) measurements were performed at different frequencies while the current-voltage (I-V) measurements of the prepared diode were performed at different light intensity conditions. The reverse bias current measured under illumination was found to be greater than the condition of dark. The obtained results approve that the diode displays a photoconducting behavior. The electrical parameters of diode were calculated from I-V data. Besides, the frequency impacts on the capacitance and conductance characteristics with regards to voltage were investigated. The experiments suggest that the fabricated diode could be chosen in the applications of the optoelectronic devices.
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    Öğe
    Electronic and optoelectronic properties of Al/coumarin doped Pr2Se3-Tl2Se/p-Si devices
    (Springer, 2018) Tataroglu, A.; Ahmedova, C.; Barim, G.; Al-Sehemi, Abdullah G.; Karabulut, Abdulkerim; Al-Ghamdi, Ahmed A.; Farooq, W. A.
    In this study, coumarin-doped Pr2Se3-Tl2Se (0.00, 0.05, 0.1, 0.3 wt% coumarin) were covered on the front side of a p-Si substrate by drop coating method and thus Al/coumarin doped Pr2Se3-Tl2Se/p-Si diodes were fabricated. The electronic and optoelectronic properties of the prepared diodes were investigated. The highest rectification ratio (RR = I-F/I-R) value was found to be 2.24 x 10(5) for the diode having 0.05 wt% coumarin doping at dark and +/- 5 V. Also, the highest I-photo/I-dark photosensitivity was found to be 1327 for the diode which has 0.1 wt% coumarin doping at 100 mW/cm(2) and - 5 V. The photocurrent of the diodes is higher than the dark current and increases by the increase of the light intensity. These results confirm that the fabricated diodes show a strong photovoltaic behavior. The electronic parameters of the diodes, for example ideality factor and barrier height values, were calculated by the use of current-voltage characteristics. The transient measurement proves that the diodes show both photodiode and photocapacitor behaviors. The change on the conductance and capacitance by the frequency is attributed to the existence of interface states. Thus, the obtained results suggest that the prepared diodes might be used as a photosensor in the applications of optoelectronic.