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    Öğe
    A novel device fabricated with Cu2NiSnS4 chalcogenide: Morphological and temperature-dependent electrical characterizations
    (Elsevier, 2020) Karabulut, Abdulkerim; Sarilmaz, Adem; Ozel, Faruk; Orak, Ikram; Sahinkaya, Mehmet Akif
    Cu2NiSnS4 nanorods were synthesized by the usage of hot-injection technique and used as interlayer between the p-Si and Al metal in order to examine their behavior against the temperature and frequency changes. The current-voltage measurements were performed in 80-300 K temperature range with 20 K steps. The X-Ray Diffraction (XRD) was used to prove the crystal structure of the synthesized Cu2NiSnS4 nanorods. Some crucial device parameters such as barrier height, series resistance and ideality factor values were calculated, and the obtained values were compared with other studies in the literature. It has been seen that the calculated parameters of the prepared device are strongly dependent on temperature changes. Besides, the capacitor behavior of fabricated device was investigated depending on the frequency and voltage changes. The experimental results indicated that the prepared device with Cu2NiSnS4 nanorods interlayer could be utilized in the electronic technology, especially applications in wide temperature range.
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    Öğe
    The effects of temperature and frequency changes on the electrical characteristics of hot-injected Cu2MnSnS4 chalcogenide-based heterojunction
    (Elsevier, 2020) Sarilmaz, Adem; Ozel, Faruk; Karabulut, Abdulkerim; Orak, Ikram; Sahinkaya, Mehmet Akif
    Cu2MnSnS4 chalcogenide was obtained with the help of hot-injection technique and used as an interfacial thin layer to examine its behavior under varying temperature and frequency conditions. The well-known XRD, SEM and EDX techniques were utilized in the analysis of structural and content. To investigate the electrical properties, the variations in current, capacitance, conductance and impedance depending on the changing voltage were investigated. In the current-voltage measurements, measurements were made in distinct temperatures in addition to room temperature, and the effect of the temperature on the basic electrical parameters such as barrier height and ideality factor was investigated. The results showed that the temperature significantly affected the electrical properties. However, capacitance, impedance and conductance measurements were carried out for various frequencies. The performed experiments indicate that the fabricated heterojunction-based device using Cu2MnSnS4 chalcogenide could be evaluated in the wide temperature applications and enhanced as a capacitor in the electronic technology.