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    Crystalline structure and morphological properties of undoped and Sn doped ZnO thin films
    (Academic Press Ltd- Elsevier Science Ltd, 2009) Caglar, Yasemin; Aksoy, Seval; Ilican, Saliha; Caglar, Mujdat
    Undoped and tin (Sn) doped ZnO thin films have been prepared by spray pyrolysis method. Effect of Sri dopant on the crystalline structure and morphological properties of ZnO thin films has been investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) method. XRD patterns confirm that the films have polycrystalline nature. While undoped ZnO film has (101) as the preferred orientation, Sri doped ZnO thin films have (002) as the preferred orientation. Grain sizes, lattice parameters and texture coefficient values of the films were determined. Microstructure was analyzed by SEM and the influence of the doping concentration in the microstructure of the films is investigated. (C) 2009 Elsevier Ltd. All rights reserved.
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    Öğe
    Fabrication of p-Si/n-ZnO:Al heterojunction diode and determination of electrical parameters
    (Elsevier Science Bv, 2018) Ilican, Saliha; Gorgun, Kamuran; Aksoy, Seval; Caglar, Yasemin; Caglar, Mujdat
    We present a fundamental experimental study of a microwave assisted chemical bath deposition (MW-CBD) method for Al doped ZnO films. Field emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD) spectroscopy were used to analyze the microstructures and crystalline structures of these films, respectively. The p-Si/n-ZnO:Al heterojunction diodes were fabricated. The current-voltage (I-V) characteristics of these diodes were measured at room temperature. The important electrical parameters such as series resistance, the ideality factor and the barrier height were determined by performing plots from the forward bias I-V characteristics using different methods. The obtained results indicate that Al doping improve the electrical properties of the p-Si/n-ZnO diode. The best rectification properties were observed in the p-Si/n-ZnO:5%Al heterojunction diode, so only capacitance-voltage (C-V) measurements of this diode were taken. Electrical parameter values such as series resistance, the built-in potential and the acceptor concentration calculated for this heterojunction diode. (C) 2017 Elsevier B.V. All rights reserved.