Yazar "Farooq, W. A." seçeneğine göre listele

Listeleniyor 1 - 4 / 4
  • [ X ]
    Öğe
    CuAlMnV shape memory alloy thin film based photosensitive diode
    (Elsevier Sci Ltd, 2020) Canbay, C. Aksu; Tataroglu, A.; Farooq, W. A.; Dere, A.; Karabulut, Abdulkerim; Atif, M.; Hanif, Atif
    In the present work, the polycrystalline quaternary shape memory alloy (SMA) using composition of Cu-10.24 Al-3.13 Mn-0.41 V (wt%) was prepared with arc melting technique. The produced SMA was characterized by X-ray diffraction (XRD) and differential scanning calorimetry (DSC). In order to fabricate the Schottky diode, the SMA was utilized as a Schottky contact on n-Si. The admittance (Y = G thorn i omega C) measurements were performed at different frequencies while the current-voltage (I-V) measurements of the prepared diode were performed at different light intensity conditions. The reverse bias current measured under illumination was found to be greater than the condition of dark. The obtained results approve that the diode displays a photoconducting behavior. The electrical parameters of diode were calculated from I-V data. Besides, the frequency impacts on the capacitance and conductance characteristics with regards to voltage were investigated. The experiments suggest that the fabricated diode could be chosen in the applications of the optoelectronic devices.
  • [ X ]
    Öğe
    Electronic and optoelectronic properties of Al/coumarin doped Pr2Se3-Tl2Se/p-Si devices
    (Springer, 2018) Tataroglu, A.; Ahmedova, C.; Barim, G.; Al-Sehemi, Abdullah G.; Karabulut, Abdulkerim; Al-Ghamdi, Ahmed A.; Farooq, W. A.
    In this study, coumarin-doped Pr2Se3-Tl2Se (0.00, 0.05, 0.1, 0.3 wt% coumarin) were covered on the front side of a p-Si substrate by drop coating method and thus Al/coumarin doped Pr2Se3-Tl2Se/p-Si diodes were fabricated. The electronic and optoelectronic properties of the prepared diodes were investigated. The highest rectification ratio (RR = I-F/I-R) value was found to be 2.24 x 10(5) for the diode having 0.05 wt% coumarin doping at dark and +/- 5 V. Also, the highest I-photo/I-dark photosensitivity was found to be 1327 for the diode which has 0.1 wt% coumarin doping at 100 mW/cm(2) and - 5 V. The photocurrent of the diodes is higher than the dark current and increases by the increase of the light intensity. These results confirm that the fabricated diodes show a strong photovoltaic behavior. The electronic parameters of the diodes, for example ideality factor and barrier height values, were calculated by the use of current-voltage characteristics. The transient measurement proves that the diodes show both photodiode and photocapacitor behaviors. The change on the conductance and capacitance by the frequency is attributed to the existence of interface states. Thus, the obtained results suggest that the prepared diodes might be used as a photosensor in the applications of optoelectronic.
  • [ X ]
    Öğe
    Interface controlling study of silicon based Schottky diode by organic layer
    (Springer, 2019) Imer, Arife Gencer; Korkut, A.; Farooq, W. A.; Dere, A.; Atif, M.; Hanif, Atif; Karabulut, Abdulkerim
    The organic layer-on- insulator-semiconductor structures have attracted most attention owing to their great significance on technological applications. The interface of silicon based metal/semiconductor diode was improved using an organic layer. In this study, Sn/p-Si MS contact and Sn/C14H15N3/p-Si MIS heterojunction were fabricated via spin coating method. The electrical parameters of both devices have been investigated, and compared using the current-voltage (I-V) and capacitance-voltage (C-V) data at room temperature. The ideality factor of diodes with and without organic interfacial layer was calculated as 1.33 and 1.28, respectively. The values of barrier height were estimated as 0.69 and 0.81 eV for the MS and MIS type structure, respectively. Additionally, the values of series resistances for both diodes were determined as 1.27 and 1.19 k omega from Norde functions, respectively. The barrier height values were also examined using the reverse bias C-2-V characteristics for both diodes, and compared with results obtained from I to V data. The experimental results confirmed that the barrier height of Sn/C14H15N3/p-Si MIS structure is considerably higher than that of traditional Sn/p-Si MS diode. The performance and quality of these type devices could be improved and controlled by inserting the organic interfacial layer between the metal and semiconductor.
  • [ X ]
    Öğe
    Photoelectrical characteristics of novel Ru(II) complexes based photodiode
    (Springer, 2019) Farooq, W. A.; Elgazzar, Elsayed; Dere, A.; Dayan, O.; Serbetci, Z.; Karabulut, Abdulkerim; Atif, M.
    The Ru(II) complex was prepared by the reaction of 4-chloro-N-[(E)-(pyridin-2-yl) methylidene] benzene-1-sulfonamide, [RuCl2(p-cymene)](2) and 2,2-(pyridine-2,6-diyl) bis(1H-benzimidazole) compounds by simple chemical technique. Al/ruthenium(II) complex/p-Si/Al was characterized by electronic devices and its electrical properties were studied as photodiode. In dark, the photodiode parameters such as potential barrier phi and ideality factor n were investigated from current-voltage (I-V) plot and confirmed by using Cheung-Cheung and Norde's models. Under illumination effect, the synthesized device shows high photosensitivity and the charge carriers increased based on the trapped state created under the conduction band. It was observed from conductance-voltage (G-V) and resistance-voltage (R-s-V) measurements that the series resistance Rs of the diode is decreased dramatically and its conductance G is increased by applied electric field.