Karabulut, AbdulkerimOrak, İkramTürüt, Abdülmecit2025-03-232025-03-2320182602-277Xhttps://doi.org/10.32571/ijct.456902https://search.trdizin.gov.tr/tr/yayin/detay/390355https://hdl.handle.net/11486/3391We have fabricated, metal-insulator-semiconductor (MIS) structures, the Au/Ti/HfO2/n-GaAs. Metal rectifying contacts weremadebyDCmagnetronsputteringtechnique,and hafnium dioxide (HfO2) interfacial insulating layer with 3, 5 and 10 nm thickness has been formed by the atomic layer depositon (ALD) technique.The series resistance values from the forward biascurrent-voltage (I-V) curves of 3 nm and 5 nm MIS structures has reduced very slightly with a decrease in the measurement temperature. Thediode potentialbarrier height value from I-Vcharacteristics increased with increasing HfO2layer thickness. Thus, the diode potential barrier height.was changed using the interfacial layer of the hafnium dioxide.Barrier height increment is an important and desirable feature in the field effect transistors (FET) and microwave mixers.eninfo:eu-repo/semantics/openAccessMühendislikElektrik ve ElektronikFizikKatı HalMühendislikKimyaArticle2211612210.32571/ijct.456902390355