Oncel, LeventBugdayci, Mehmet2026-04-252026-04-2520250008-44331879-1395https://doi.org/10.1080/00084433.2025.2605704https://hdl.handle.net/11486/8355Transition metal borides are advanced materials with superior mechanical and thermal properties. Manganese borides combine high hardness with thermal stability and wear resistance, making them suitable for energy-storage parts, magnetic devices, and high-temperature service. In this study, Mn-B compounds were synthesised via self-propagating high-temperature synthesis (SHS) for the first time. The MnO-B2O3-Mg system was thermodynamically modelled in FactSage 7.1 to define the reaction conditions. Experiments were conducted using magnesium as the reductant at stoichiometries ranging from 100% to 115%. XRD showed MgO as the dominant phase at all levels; MgB2 appeared at 100% Mg, and MnB with Mn3B2O6 was present in every composition. Mg-based by-products appeared in all stoichiometries and were removed by acid leaching with 6 M HCl. After leaching, the primary phases were Mn2B, MnB, and MnB2, while boron-related peaks appeared only at 100% stoichiometry. Accordingly, the formation of manganese - boron compounds requires at least 105% Mg stoichiometry. SEM/EDS analysis of the leached sample confirmed the removal of Mg- and O-containing impurities. Since 110-115% offered no advantage but raised magnesium use, 105% was identified as the optimum stoichiometry. These findings confirm SHS as a viable route for producing manganese boride ceramics for advanced applications. Les borures de m & eacute;taux de transition sont des mat & eacute;riaux avanc & eacute;s aux propri & eacute;t & eacute;s m & eacute;caniques et thermiques sup & eacute;rieures. Les borures de mangan & egrave;se combinent une duret & eacute; & eacute;lev & eacute;e & agrave; une stabilit & eacute; thermique et une r & eacute;sistance & agrave; l'usure, ce qui les rend adapt & eacute;s aux pi & egrave;ces de stockage d'& eacute;nergie, aux dispositifs magn & eacute;tiques et aux applications & agrave; haute temp & eacute;rature. Dans cette & eacute;tude, on a synth & eacute;tis & eacute; des compos & eacute;s Mn-B par synth & egrave;se autopropag & eacute;e & agrave; haute temp & eacute;rature (SHS) pour la premi & egrave;re fois. On a mod & eacute;lis & eacute; thermodynamiquement le syst & egrave;me MnO-B2O3-Mg dans FactSage 7.1 afin de d & eacute;finir les conditions de r & eacute;action. On a effectu & eacute; des exp & eacute;riences en utilisant le magn & eacute;sium comme agent r & eacute;ducteur & agrave; des st oe chiom & eacute;tries allant de 100% & agrave; 115%. La DRX a montr & eacute; le MgO comme phase dominante & agrave; tous les niveaux; MgB2 apparaissait & agrave; 100% de Mg, et MnB avec Mn3B2O6 & eacute;tait pr & eacute;sent dans toutes les compositions. Des sous-produits & agrave; base de Mg apparaissaient dans toutes les st oe chiom & eacute;tries et & eacute;taient & eacute;limin & eacute;s par lixiviation acide avec du HCl 6 M. Apr & egrave;s lixiviation, les phases principales comprenaient Mn2B, MnB et MnB2, tandis que les pics associ & eacute;s au bore n'apparaissaient qu'& agrave; 100% de st oe chiom & eacute;trie. Par cons & eacute;quent, la formation de compos & eacute;s de mangan & egrave;se-bore n & eacute;cessite une st oe chiom & eacute;trie en Mg d'au moins 105%. L'analyse MEB/EDS de l'& eacute;chantillon lixivi & eacute; a confirm & eacute; l'& eacute;limination des impuret & eacute;s contenant Mg et O. Puisque 110 & agrave; 115% n'offraient aucun avantage mais & eacute;levaient la consommation de magn & eacute;sium, on a identifi & eacute; la st oe chiom & eacute;trie optimale & agrave; 105%. Ces r & eacute;sultats confirment la SHS comme une voie viable pour la production de c & eacute;ramiques de borure de mangan & egrave;se pour des applications avanc & eacute;es.eninfo:eu-repo/semantics/closedAccessBoridesSHSFactSagemanganeseThermodynamic modelling and production of manganese boride compounds via self-propagating high temperature synthesisArticle10.1080/00084433.2025.2605704Q3WOS:001642145600001Q30000-0002-6018-87410000-0001-6276-9251