Karabulut, Abdulkerim2025-03-232025-03-2320182146-05742536-4618https://doi.org/10.21597/jist.418869https://search.trdizin.gov.tr/tr/yayin/detay/290768https://hdl.handle.net/11486/3607In this study, Al/TiO2/p-Si/Al heterojunction is fabricated and investigated some electrical and dielectriccharacteristics. Atomic layer deposition technique was used for synthesize of TiO2 interfacial layer due to the someadvantages such as uniformity and stability of surface. For determining electrical and dielectric characteristics,impedance spectroscopy measurements were performed in range from -1 to +1 V bias voltages and 10 kHz-1MHzfrequency range at room temperature. As an electrical parameters, interface states distribution and series resistancevalues was determined. In addition to these, it is found that the dielectric properties such as dielectric loss andconstant, real and imaginary parts of electric modulus, loss tangent and AC electric conductivity values wasdepended on frequency and voltage strongly. The electrical and dielectric characteristics show that interface statesand polarization values of fabricated device can follow AC signal at low frequency valueseninfo:eu-repo/semantics/openAccessNanobilim ve NanoteknolojiFizikKatı HalFizikokimyaMühendislikKimyaArticle8311912910.21597/jist.418869290768