Aksoy, Seval2025-03-232025-03-2320192667-4211https://doi.org/10.18038/estubtda.506606https://search.trdizin.gov.tr/tr/yayin/detay/359255https://hdl.handle.net/11486/3675To investigate the effects of Mn dopant on n-ZnO/p-Si device performance, ZnO films were produced in different Mn dopantby the sol gel spin coating method. Morphological properties of the films were studied by FESEM. Then, the n-ZnO:Mn/p-Siheterojunction diodes were fabricated. The diode parameters were determined by I-V measurements. The 𝑛 values of the diodeswere found to be 8.38, 6.84 and 3.87, respectively, for the diodes produced using undoped, 1% Mn doped and 3% Mn dopedZnO films. At the same time, electrical parameters were determined to compare by using Cheung and Norde methods.According to the evaluation of 𝑛 values obtained by different methods, an improvement on the rectifying properties of the ZnOdiode with Mn dopant has been observed. In the continuation of the study, the photovoltaic properties of the heterojunctiondiodes have been studied. The results obtained at different illumination intensities showed that the diodes are sensitive to light.C-V measurements of the fabricated diodes are also investigated in detail.eninfo:eu-repo/semantics/openAccessMühendislikElektrik ve ElektronikArticle20329630610.18038/estubtda.506606359255