Gozeh, Bestoon AnwerKarabulut, AbdulkerimAmeen, Mudhaffer M.Yildiz, AbdulkadirYakuphanoglu, Fahrettin2025-03-232025-03-2320200218-625X1793-6667https://doi.org/10.1142/S0218625X19501737https://hdl.handle.net/11486/5202In this work, the La-doped ZnO thin films were fabricated with different La concentrations by the use of sol-gel technique to synthesize the photodevice. The transparent metal oxide La-doped ZnO thin films were grown on glass and p-Si substrates using spin coating technique. Optical, surface morphology and electrical characterization of the fabricated Al/p-Si/La:ZnO/Al devices have been performed using I-V and C/G-V characteristics under dark and different illumination conditions. Herein, from I-V characteristics, the crucial electronic parameters such as barrier height, ideality factor and series resistance were investigated. The photodevice transient photocurrent increases with the increase of illumination intensity. The current ratios of I-on/I-off were calculated for the fabricated devices. Among the devices, the highest photoresponse was found to be about 2186 for the Al/p-Si/La(0.5 wt.%):ZnO/Al structure. The R-s-V behavior of fabricated device confirms the presence of interface states. The obtained results and photoresponse behaviors suggested that Al/p-Si/La:ZnO/Al devices can enhance the applications in optoelectronic devices such as photodetectors.eninfo:eu-repo/semantics/closedAccessElectrical characteristicsdoped ZnOsol-gelphotoresponsephotodetectorArticle27710.1142/S0218625X195017372-s2.0-85075775749Q3WOS:000552274100006Q4