Turut, A.Karabulut, A.Ejderha, K.Biyikli, N.2025-03-232025-03-2320151369-80011873-4081https://doi.org/10.1016/j.mssp.2015.05.025https://hdl.handle.net/11486/6300We have studied the admittance and current-voltage characteristics of the Au/Ti/Al2O3/n-GaAs structure. The Al2O3 layer of about 5 nm was formed on the n-GaAs by atomic layer deposition. The barrier height (BH) and ideality factor values of 1.18 eV and 2.45 were obtained from the forward-bias In I vs V plot at 300 K. The BH value of 1.18 eV is larger than the values reported for conventional Ti/n-GaAs or Au/Ti/n-GaAs diodes. The barrier modification is very important in metal semiconductor devices. The use of an increased barrier diode as the gate can provide an adequate barrier height for FET operation while the decreased barrier diodes also show promise as small signal zero-bias rectifiers and microwave. The experimental capacitance and conductance characteristics were corrected by taking into account the device series resistance Rs. It has been seen that the noncorrection characteristics cause a serious error in the extraction of the interfacial properties. Furthermore, the device behaved more capacitive at the reverse bias voltage range rather than the forward bias voltage range because the phase angle in the reverse bias has remained unchanged as 90 independent of the measurement frequency. (C) 2015 Elsevier Ltd. All rights reserved.eninfo:eu-repo/semantics/closedAccessSchottky-Barrier DiodesElectrical CharacteristicsInhomogeneous BarrierDielectric-PropertiesCurrent-TransportInterface StatesTemperatureFrequencyParametersHeightsArticle3940040710.1016/j.mssp.2015.05.0252-s2.0-84930663755Q1WOS:000361774100055Q2